Improved Oxide Properties by Anodization of Aluminum Films with Thin Sputtered Aluminum Oxide Overlays

S. G. Byeon, Y. Tzeng

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Aluminum oxide films ranging from 500 to 2500A in thickness are fabricated by anodizing aluminum films which are covered with thin sputtered aluminum oxide layers. The dielectric, electrical, and structural properties of these films are compared with those fabricated by means of either anodization or sputtering. The anodized aluminum thin films with initial sputtered oxide overlays have the advantages of both the high breakdown field strength of anodized film and the low dissipation factor of sputtered film. Improved properties for the anodized aluminum thin films with initial sputtered aluminum oxide overlays are discussed in comparison with oxide films prepared by the other two methods for applications to charge storage capacitors.

Original languageEnglish
Pages (from-to)2452-2458
Number of pages7
JournalJournal of the Electrochemical Society
Volume135
Issue number10
DOIs
Publication statusPublished - 1988 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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