Abstract
Aluminum oxide films ranging from 500 to 2500A in thickness are fabricated by anodizing aluminum films which are covered with thin sputtered aluminum oxide layers. The dielectric, electrical, and structural properties of these films are compared with those fabricated by means of either anodization or sputtering. The anodized aluminum thin films with initial sputtered oxide overlays have the advantages of both the high breakdown field strength of anodized film and the low dissipation factor of sputtered film. Improved properties for the anodized aluminum thin films with initial sputtered aluminum oxide overlays are discussed in comparison with oxide films prepared by the other two methods for applications to charge storage capacitors.
| Original language | English |
|---|---|
| Pages (from-to) | 2452-2458 |
| Number of pages | 7 |
| Journal | Journal of the Electrochemical Society |
| Volume | 135 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1988 Oct |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry