Improved performance of a dual-passivated heterojunction bipolar transistor

Shiou Ying Cheng, Ssu I. Fu, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Dual passivation (with ledge structure and sulfur treatment) on base surface is employed to improve device performance of an InGaPGaAs heterojunction bipolar transistor (HBT). By using this dual-passivation technique, good transistor characteristics such as dc current gain ßF, offset voltage Δ VCE, specific contact resistance ρ C, and sheet resistance Rsh are obtained. In addition, the InGaPGaAs HBT with dual passivation exhibits improved thermal stability and microwave characteristics. Our experimental results suggest that the dual-passivated device can be used for high-temperature and/or low-power electronics applications.

Original languageEnglish
Pages (from-to)734-738
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
Publication statusPublished - 2007 Jun 11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Improved performance of a dual-passivated heterojunction bipolar transistor'. Together they form a unique fingerprint.

Cite this