Dual passivation (with ledge structure and sulfur treatment) on base surface is employed to improve device performance of an InGaPGaAs heterojunction bipolar transistor (HBT). By using this dual-passivation technique, good transistor characteristics such as dc current gain ßF, offset voltage Δ VCE, specific contact resistance ρ C, and sheet resistance Rsh are obtained. In addition, the InGaPGaAs HBT with dual passivation exhibits improved thermal stability and microwave characteristics. Our experimental results suggest that the dual-passivated device can be used for high-temperature and/or low-power electronics applications.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2007 Jun 11|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)