Improved performance of a dual-passivated heterojunction bipolar transistor

Shiou Ying Cheng, Ssu I. Fu, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Dual passivation (with ledge structure and sulfur treatment) on base surface is employed to improve device performance of an InGaPGaAs heterojunction bipolar transistor (HBT). By using this dual-passivation technique, good transistor characteristics such as dc current gain ßF, offset voltage Δ VCE, specific contact resistance ρ C, and sheet resistance Rsh are obtained. In addition, the InGaPGaAs HBT with dual passivation exhibits improved thermal stability and microwave characteristics. Our experimental results suggest that the dual-passivated device can be used for high-temperature and/or low-power electronics applications.

Original languageEnglish
Pages (from-to)734-738
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number3
DOIs
Publication statusPublished - 2007 Jun 11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

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