Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer

Chung Hsun Jang, Jinn Kong Sheu, J. T. Tsai, Shoou Jinn Chang, Wei Chih Lai, Ming Lun Lee, T. K. Ko, C. F. Shen, S. C. Shei

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

In this study, we demonstrate the effect of GaN-based blue light-emitting diodes (LEDs), using an InGaN layer inserted between the n-type GaN cladding layer and the active layer (InGaN/GaN multiple quantum well), on improving device performances. With a 20-mA current injection, the results indicate that the typical output power (or forward voltage) of light-emitting diodes grown with, and without, the InGaN insertion layer are approximately 18.1 (3.1) and 15.3(3.5) mW (V), respectively. This corresponds to an enhancement in output power (wall-plug efficiency) of around 18% (33%), with the use of the InGaN insertion layer. In addition, the electrostatic discharge (ESD) endurance voltages increased from 1000 V to 6000 V when the InGaN insertion layer was applied to the GaN/sapphire-based LEDs. The improvement of output power and ESD endurance voltage could be mainly due to the fact that the Si-doped InGaN insertion layer played the role of a current-spreading layer, which led to a lower possibility of junctions suffering a large current density in specific local sites.

Original languageEnglish
Article number5412126
Pages (from-to)513-517
Number of pages5
JournalIEEE Journal of Quantum Electronics
Volume46
Issue number4
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Improved performance of GaN-based blue LEDs with the InGaN insertion layer between the MQW active layer and the n-GaN cladding layer'. Together they form a unique fingerprint.

Cite this