Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

Yi Jung Liu; Chien Chang Huang; Tai You Chen; Chi Shiang Hsu; Shiou Ying Cheng; Kun Wei Lin; Jian Kai Liou; Wen Chau Liu

doi:10.1016/s1002-0071(12)60009-4

Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

Yi Jung Liu, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Shiou Ying Cheng, Kun Wei Lin, Jian Kai Liou, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

An InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with a ten-period i (undoped) -InGaN/p (Mg doped) -GaN (2.5 nm/5.0 nm) superlattice (SL) structure, was fabricated. This SL structure that can be regarded as a confinement layer of holes to enhance the hole injection efficiency is inserted between MQW and p-GaN layers. The studied LED device exhibits better current spreading performance and an improved quality, compared with a conventional one without SL structure. Due to the reduced contact resistance as well as more uniformity of carriers injection, the operation voltage at 20 mA is decreased from 3.32 to 3.14 V. A remarkably reduced reverse-biased leakage current (10^-7-10^-9 A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%, respectively. In addition, significant enhancement of 25.4% in output power as well as increment of 5% in EQE for the studied devices is observed, as the studied devices show superior current spreading ability and reduction in dislocations offered by the SL structure.

Original language	English
Pages (from-to)	70-75
Number of pages	6
Journal	Progress in Natural Science: Materials International
Volume	20
Issue number	1
DOIs	https://doi.org/10.1016/s1002-0071(12)60009-4
Publication status	Published - 2010 Nov

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1016/s1002-0071(12)60009-4

Cite this

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title = "Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures",

abstract = "An InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with a ten-period i (undoped) -InGaN/p (Mg doped) -GaN (2.5 nm/5.0 nm) superlattice (SL) structure, was fabricated. This SL structure that can be regarded as a confinement layer of holes to enhance the hole injection efficiency is inserted between MQW and p-GaN layers. The studied LED device exhibits better current spreading performance and an improved quality, compared with a conventional one without SL structure. Due to the reduced contact resistance as well as more uniformity of carriers injection, the operation voltage at 20 mA is decreased from 3.32 to 3.14 V. A remarkably reduced reverse-biased leakage current (10-7-10-9 A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%, respectively. In addition, significant enhancement of 25.4% in output power as well as increment of 5% in EQE for the studied devices is observed, as the studied devices show superior current spreading ability and reduction in dislocations offered by the SL structure.",

author = "Liu, {Yi Jung} and Huang, {Chien Chang} and Chen, {Tai You} and Hsu, {Chi Shiang} and Cheng, {Shiou Ying} and Lin, {Kun Wei} and Liou, {Jian Kai} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of China under Contract (97–2221–E–006–238–MY3) .",

year = "2010",

month = nov,

doi = "10.1016/s1002-0071(12)60009-4",

language = "English",

volume = "20",

pages = "70--75",

journal = "Progress in Natural Science: Materials International",

issn = "1002-0071",

publisher = "Chinese Materials Research Society",

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TY - JOUR

T1 - Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

AU - Liu, Yi Jung

AU - Huang, Chien Chang

AU - Chen, Tai You

AU - Hsu, Chi Shiang

AU - Cheng, Shiou Ying

AU - Lin, Kun Wei

AU - Liou, Jian Kai

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of China under Contract (97–2221–E–006–238–MY3) .

PY - 2010/11

Y1 - 2010/11

N2 - An InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with a ten-period i (undoped) -InGaN/p (Mg doped) -GaN (2.5 nm/5.0 nm) superlattice (SL) structure, was fabricated. This SL structure that can be regarded as a confinement layer of holes to enhance the hole injection efficiency is inserted between MQW and p-GaN layers. The studied LED device exhibits better current spreading performance and an improved quality, compared with a conventional one without SL structure. Due to the reduced contact resistance as well as more uniformity of carriers injection, the operation voltage at 20 mA is decreased from 3.32 to 3.14 V. A remarkably reduced reverse-biased leakage current (10-7-10-9 A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%, respectively. In addition, significant enhancement of 25.4% in output power as well as increment of 5% in EQE for the studied devices is observed, as the studied devices show superior current spreading ability and reduction in dislocations offered by the SL structure.

AB - An InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with a ten-period i (undoped) -InGaN/p (Mg doped) -GaN (2.5 nm/5.0 nm) superlattice (SL) structure, was fabricated. This SL structure that can be regarded as a confinement layer of holes to enhance the hole injection efficiency is inserted between MQW and p-GaN layers. The studied LED device exhibits better current spreading performance and an improved quality, compared with a conventional one without SL structure. Due to the reduced contact resistance as well as more uniformity of carriers injection, the operation voltage at 20 mA is decreased from 3.32 to 3.14 V. A remarkably reduced reverse-biased leakage current (10-7-10-9 A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%, respectively. In addition, significant enhancement of 25.4% in output power as well as increment of 5% in EQE for the studied devices is observed, as the studied devices show superior current spreading ability and reduction in dislocations offered by the SL structure.

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Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

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