Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2

P. C. Chang, Y. K. Su, K. J. Lee, C. L. Yu, S. J. Chang, C. H. Liu

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13 Citations (Scopus)

Abstract

Nitride-based UV Schottky barrier photodetectors (PDs) with Ir/Pt after annealing in O2 at 600 °C were fabricated successfully. With -5 V applied bias, the reverse leakage current of the annealed PD was 3.65 × 10-12 A. It was found that we could achieve the larger Schottky barrier height, the smaller dark current and the larger photocurrent to dark current contrast ratio by annealing Ir/Pt. After annealing, the Schottky barrier height increased from 0.91 eV to 1.03 eV and the ideality factor decreased from 1.58 to 1.16. Such a result indicated that the dominant current transport mechanism may be thermionic emission and the Schottky contact is near-ideal after annealing. These results could be attributed to the formation of IrO x phase. It was also found that responsivity and the UV-to-visible rejection ratio were 0.19 A/W and 1.05 × 103 after annealing with -6 V applied bias.

Original languageEnglish
Pages (from-to)S429-S431
JournalJournal of Alloys and Compounds
Volume504
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2010 Aug

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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