Improved performance of non-annealed ohmic-recess metamorphic high electron mobility transistor

L. Y. Chen, S. Y. Cheng, K. Y. Chu, C. W. Hung, T. P. Chen, T. H. Tsai, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

An interesting In0.5Al0.5As/In0.5Ga 0.5As metamorphic high electron mobility transistor with non-annealed ohmic-recess (NAOR) technique is fabricated and studied. Experimentally, the parasitic resistance is substantially reduced. The used NAOR technique shows benefits of the absence of thermal treatment (non-annealed) for ohmic contact. Compared with the traditional structure, both the DC and the RF performance is significantly improved. From experimental results, the studied 1 m gate length with NAOR technique exhibits breakdown voltage of 22.93 (16.89) V, drain saturation current of 327 (299) mA/mm and parasitic resistance of 1.67 (2.02) · mm at 300 (500) K. The unity current gain cutoff frequency f T and maximum oscillation frequency fmax are 20.5 and 62.3 GHz at 300 K.

Original languageEnglish
Pages (from-to)771-773
Number of pages3
JournalElectronics Letters
Volume44
Issue number12
DOIs
Publication statusPublished - 2008 Jun 10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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