In this study, the authors used a double-layer gate dielectric with the same solution processable polyimide to form a gate insulator gate layer after hard curing at 200 °C to improve the roughness of surface of the nanocomposite gate dielectric with high dielectric constant. The bottom layer is a nanocomposite with polyimide and nanoparticle Ti O2 blending, which is responsible for enhancing the dielectric constant of the gate insulator. The upper layer is the neat polyimide, which is responsible for smoothing the roughness of the gate insulator and contacting with semiconductor (pentacene) in this work. An organic thin-film transistor device made from the double-layer nanocomposite gate dielectric exhibits very promising performance, including high current on-to-off ratio of about 6× 105, threshold voltage of -10 V, and moderately high field mobility of 0.15 cm2 V-1 s-1.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2009 Apr 20|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering