Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring

M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, G. C. Chi

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

This study analyzes planar GaN p-i-n photodetectors (PDs) fabricated using Si implantation. The authors have used triple silicon implantation to form a selective n+ channel, acting like a contact wire to connect the underlying n layer and the n contact located on the surface, through a GaN-based p-i-n structure. In order to suppress the lateral current conduction from the n contact to p contact, an extra Mg-implanted isolation ring between the n+ channel and the active p-i-n layers was also performed to achieve improvement of device performance. Typical peak responsivity and cutoff wavelength of Si-implanted planar p-i-n PDs were around 0.11 AW and 365 nm, respectively.

Original languageEnglish
Article number183509
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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