Abstract
In this paper, we report, for the first time, the fabrication and characterization of Si/SiGe doped-channel field-effect transistors (DCFETs) using an inductively coupled plasma (ICP) dry etching process. ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, give a better anisotropic etching profile and almost eliminate the parasitic current path between isolated devices. Experimental results show that the doped-channel FET using ICP mesa has higher breakdown voltage, lower leakage current, higher transconductance and larger current drivability as compared to devices fabricated using wet mesa etching.
Original language | English |
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Pages (from-to) | 1053-1056 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 19 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2004 Aug |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry