In this paper, we report, for the first time, the fabrication and characterization of Si/SiGe doped-channel field-effect transistors (DCFETs) using an inductively coupled plasma (ICP) dry etching process. ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, give a better anisotropic etching profile and almost eliminate the parasitic current path between isolated devices. Experimental results show that the doped-channel FET using ICP mesa has higher breakdown voltage, lower leakage current, higher transconductance and larger current drivability as compared to devices fabricated using wet mesa etching.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry