Improved performances of a two-step passivated heterojunction bipolar transistor

Shiou Ying Cheng; Ssu I. Fu; Kuei Yi Chu; Tzu Pin Chen; Wen Chau Liu; Li Yang Chen

doi:10.1016/j.microrel.2007.04.002

Improved performances of a two-step passivated heterojunction bipolar transistor

Shiou Ying Cheng, Ssu I. Fu, Kuei Yi Chu, Tzu Pin Chen, Wen Chau Liu, Li Yang Chen

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with a two-step passivated (ledge structure and sulfur treatment) process on the base surface has been fabricated and studied. Based on the two-step passivation, improved transistor characteristics including the specific contact resistances ρ_C, sheet resistances R_sh, base surface recombination current density J_SR, base current ideality factor n_B, and microwave performances are obtained. Furthermore, the device with two-step passivation reveals the better thermal stability on ρ_C, R_sh, and n_B than the devices with and without ledge structure. Therefore, the two-step passivation method can be employed for high-temperature and low-power electronics applications.

Original language	English
Pages (from-to)	200-203
Number of pages	4
Journal	Microelectronics Reliability
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/j.microrel.2007.04.002
Publication status	Published - 2008 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2007.04.002

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@article{44e34430f0fa40d3b540c279aa04785f,

title = "Improved performances of a two-step passivated heterojunction bipolar transistor",

abstract = "An interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with a two-step passivated (ledge structure and sulfur treatment) process on the base surface has been fabricated and studied. Based on the two-step passivation, improved transistor characteristics including the specific contact resistances ρC, sheet resistances Rsh, base surface recombination current density JSR, base current ideality factor nB, and microwave performances are obtained. Furthermore, the device with two-step passivation reveals the better thermal stability on ρC, Rsh, and nB than the devices with and without ledge structure. Therefore, the two-step passivation method can be employed for high-temperature and low-power electronics applications.",

author = "Cheng, {Shiou Ying} and Fu, {Ssu I.} and Chu, {Kuei Yi} and Chen, {Tzu Pin} and Liu, {Wen Chau} and Chen, {Li Yang}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 94-2215-E197-002 and NSC 94-2215-E006-060.",

year = "2008",

month = feb,

doi = "10.1016/j.microrel.2007.04.002",

language = "English",

volume = "48",

pages = "200--203",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Improved performances of a two-step passivated heterojunction bipolar transistor

AU - Cheng, Shiou Ying

AU - Fu, Ssu I.

AU - Chu, Kuei Yi

AU - Chen, Tzu Pin

AU - Liu, Wen Chau

AU - Chen, Li Yang

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 94-2215-E197-002 and NSC 94-2215-E006-060.

PY - 2008/2

Y1 - 2008/2

N2 - An interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with a two-step passivated (ledge structure and sulfur treatment) process on the base surface has been fabricated and studied. Based on the two-step passivation, improved transistor characteristics including the specific contact resistances ρC, sheet resistances Rsh, base surface recombination current density JSR, base current ideality factor nB, and microwave performances are obtained. Furthermore, the device with two-step passivation reveals the better thermal stability on ρC, Rsh, and nB than the devices with and without ledge structure. Therefore, the two-step passivation method can be employed for high-temperature and low-power electronics applications.

AB - An interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with a two-step passivated (ledge structure and sulfur treatment) process on the base surface has been fabricated and studied. Based on the two-step passivation, improved transistor characteristics including the specific contact resistances ρC, sheet resistances Rsh, base surface recombination current density JSR, base current ideality factor nB, and microwave performances are obtained. Furthermore, the device with two-step passivation reveals the better thermal stability on ρC, Rsh, and nB than the devices with and without ledge structure. Therefore, the two-step passivation method can be employed for high-temperature and low-power electronics applications.

UR - http://www.scopus.com/inward/record.url?scp=44249120777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44249120777&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2007.04.002

DO - 10.1016/j.microrel.2007.04.002

M3 - Article

AN - SCOPUS:44249120777

SN - 0026-2714

VL - 48

SP - 200

EP - 203

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 2

ER -

Improved performances of a two-step passivated heterojunction bipolar transistor

Abstract

All Science Journal Classification (ASJC) codes

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