Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

C. C. Yang, J. K. Sheu, C. H. Kuo, M. S. Huang, S. J. Tu, F. W. Huang, M. L. Lee, Yu Hsiang Yeh, X. W. Liang, W. C. Lai

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The InGaN/sapphire-based photovoltaic (PV) cells with Al 0.14Ga0.86N/In0.21Ga0.79N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm2, 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.

Original languageEnglish
Article number5719623
Pages (from-to)536-538
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2011 Apr 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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