Improved properties of Al-doped ZnO film by electron beam evaporation technique

D. R. Sahu; Shin Yuan Lin; Jow Lay Huang

doi:10.1016/j.mejo.2006.11.005

Improved properties of Al-doped ZnO film by electron beam evaporation technique

D. R. Sahu, Shin Yuan Lin, Jow Lay Huang

Research output: Contribution to journal › Article › peer-review

82 Citations (Scopus)

Abstract

High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 °C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 °C. Finally, the maximum electrical resistivity of 2.5×10^-4 Ω cm and optical transmittance of more than 85% has been found at 200 °C growth temperature, which explains its relation with the crystal quality of the film.

Original language	English
Pages (from-to)	245-250
Number of pages	6
Journal	Microelectronics Journal
Volume	38
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mejo.2006.11.005
Publication status	Published - 2007 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2006.11.005

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title = "Improved properties of Al-doped ZnO film by electron beam evaporation technique",

abstract = "High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 °C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 °C. Finally, the maximum electrical resistivity of 2.5×10-4 Ω cm and optical transmittance of more than 85% has been found at 200 °C growth temperature, which explains its relation with the crystal quality of the film.",

author = "Sahu, {D. R.} and Lin, {Shin Yuan} and Huang, {Jow Lay}",

note = "Funding Information: Financial support provided by National science Council of Taiwan under contract no. NSC-94-2120-M-006-006 is highly acknowledged.",

year = "2007",

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doi = "10.1016/j.mejo.2006.11.005",

language = "English",

volume = "38",

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journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Improved properties of Al-doped ZnO film by electron beam evaporation technique

AU - Sahu, D. R.

AU - Lin, Shin Yuan

AU - Huang, Jow Lay

N1 - Funding Information: Financial support provided by National science Council of Taiwan under contract no. NSC-94-2120-M-006-006 is highly acknowledged.

PY - 2007/2

Y1 - 2007/2

N2 - High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 °C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 °C. Finally, the maximum electrical resistivity of 2.5×10-4 Ω cm and optical transmittance of more than 85% has been found at 200 °C growth temperature, which explains its relation with the crystal quality of the film.

AB - High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 °C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 °C. Finally, the maximum electrical resistivity of 2.5×10-4 Ω cm and optical transmittance of more than 85% has been found at 200 °C growth temperature, which explains its relation with the crystal quality of the film.

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JO - Microelectronics Journal

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ER -

Improved properties of Al-doped ZnO film by electron beam evaporation technique

Abstract

All Science Journal Classification (ASJC) codes

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