TY - JOUR
T1 - Improved reliability and ESD characteristics of flip-chip GaN-based LEDs with internal inverse-parallel protection diodes
AU - Shei, Shih Chang
AU - Sheu, Jinn Kong
AU - Shen, Chien Fu
N1 - Funding Information:
Manuscript received January 8, 2007; revised February 26, 2007. This work was supported by the National Science Council under Research Grants NSC 95-2221-E-006-354 and NSC 95-2221-E-006-416. The review of this letter was arranged by Editor G. Meneghesso.
PY - 2007/5
Y1 - 2007/5
N2 - In this letter, a GaN/sapphire light-emitting diode (LED) structure was designed with improved electrostatic discharge (ESD) performance through the use of a shunt GaN ESD diode connected in inverse-parallel to the GaN LED. Thus, electrostatic charge can be discharged from the GaN LED through the shunt diode. We found that the ESD withstanding capability of GaN/sapphire LEDs incorporating this ESD-protection feature could be increased from several hundreds up to 3500 V in the human body model. Furthermore, flip-chip (FC) technology was also used to produce ESD-protected LEDs to further improve light output power and reliability. At a 20-mA current injection, the output power of the FC LEDs showed an improvement of around 60%. After a 1200-h aging test, the luminous intensities of the FC LEDs featuring an internal ESD-protection diode decreased by 4%. This decay percentage was far less than those of non-FC LEDs.
AB - In this letter, a GaN/sapphire light-emitting diode (LED) structure was designed with improved electrostatic discharge (ESD) performance through the use of a shunt GaN ESD diode connected in inverse-parallel to the GaN LED. Thus, electrostatic charge can be discharged from the GaN LED through the shunt diode. We found that the ESD withstanding capability of GaN/sapphire LEDs incorporating this ESD-protection feature could be increased from several hundreds up to 3500 V in the human body model. Furthermore, flip-chip (FC) technology was also used to produce ESD-protected LEDs to further improve light output power and reliability. At a 20-mA current injection, the output power of the FC LEDs showed an improvement of around 60%. After a 1200-h aging test, the luminous intensities of the FC LEDs featuring an internal ESD-protection diode decreased by 4%. This decay percentage was far less than those of non-FC LEDs.
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U2 - 10.1109/LED.2007.895428
DO - 10.1109/LED.2007.895428
M3 - Article
AN - SCOPUS:34247604071
VL - 28
SP - 346
EP - 349
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 5
ER -