Improved stability of amorphous silicon solar cells with p-type nanocrystalline silicon carbide window layer

Ping Kuan Chang, Wei Tse Hsu, Po Tsung Hsieh, Chun Hsiung Lu, Chih Hung Yeh, Mau Phon Houng

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this work, a concept to mitigate light-induced degradation of thin film silicon solar cells is systematically demonstrated. To overcome the light-induced degradation of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells, conventional p-type hydrogenated amorphous silicon-carbide (p-a-SiC:H) layer is replaced by the p-type nanocrystalline silicon carbide (p-nc-SiC:H). Current-voltage characteristics of solar cells fabricated with p-nc-SiC:H layers are evaluated. The introduction of a p-nc-SiC:H layer as a window layer for a-Si:H solar cells improves the light soaking degradation ratio from 24.6% to 15.9% compared to a-Si:H solar cells with a conventional p-a-SiC:H layers. Although the initial efficiency with p-nc-SiC:H layers is not as high as the standard a-Si:H solar cell with p-a-SiC:H layers, the stabilized efficiency of a-Si:H solar cell with p-nc-SiC:H window layer (8.0%) still exceeds that of the standard a-Si:H cell (7.7%).

Original languageEnglish
Pages (from-to)3096-3099
Number of pages4
JournalThin Solid Films
Volume520
Issue number7
DOIs
Publication statusPublished - 2012 Jan 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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