Improved stability of Co-sputtered Ti-IGZO Channel Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Yen Hao-Ping; Shui-Jinn Wang; Chien Hsiung Hung; Nai Sheng Wu; Ying Chi Hung; Cheng-Xiu Lin; Zhi-Kai Zhuang; Ching Yi Chen; Chien Hung Wu

Improved stability of Co-sputtered Ti-IGZO Channel Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

Yen Hao-Ping , Shui-Jinn Wang, Chien Hsiung Hung, Nai Sheng Wu, Ying Chi Hung, Cheng-Xiu Lin, Zhi-Kai Zhuang, Ching Yi Chen, Chien Hung Wu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2017 International Conference on Solid State Devices and Materials (SSDM’17)
Place of Publication	Sendai, Japan
Publication status	Published - 2017 Sep 19

Cite this

Hao-Ping , Yen ; Wang, Shui-Jinn ; Hung, Chien Hsiung ; Wu, Nai Sheng ; Hung, Ying Chi ; Lin, Cheng-Xiu ; Zhuang, Zhi-Kai ; Chen, Ching Yi ; Wu, Chien Hung. / Improved stability of Co-sputtered Ti-IGZO Channel Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric. 2017 International Conference on Solid State Devices and Materials (SSDM’17). Sendai, Japan, 2017.

@inproceedings{abd63873c6a44edfb227930562c76897,

title = "Improved stability of Co-sputtered Ti-IGZO Channel Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric",

author = "Yen Hao-Ping and Shui-Jinn Wang and Hung, {Chien Hsiung} and Wu, {Nai Sheng} and Hung, {Ying Chi} and Cheng-Xiu Lin and Zhi-Kai Zhuang and Chen, {Ching Yi} and Wu, {Chien Hung}",

year = "2017",

month = sep,

day = "19",

language = "English",

booktitle = "2017 International Conference on Solid State Devices and Materials (SSDM{\textquoteright}17)",

}

Improved stability of Co-sputtered Ti-IGZO Channel Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric. / Hao-Ping , Yen; Wang, Shui-Jinn; Hung, Chien Hsiung; Wu, Nai Sheng; Hung, Ying Chi; Lin, Cheng-Xiu; Zhuang, Zhi-Kai; Chen, Ching Yi; Wu, Chien Hung.

2017 International Conference on Solid State Devices and Materials (SSDM’17). Sendai, Japan, 2017.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Improved stability of Co-sputtered Ti-IGZO Channel Thin-Film Transistors with Zr0.85Si0.15O2 Gate Dielectric

AU - Hao-Ping , Yen

AU - Wang, Shui-Jinn

AU - Hung, Chien Hsiung

AU - Wu, Nai Sheng

AU - Hung, Ying Chi

AU - Lin, Cheng-Xiu

AU - Zhuang, Zhi-Kai

AU - Chen, Ching Yi

AU - Wu, Chien Hung

PY - 2017/9/19

Y1 - 2017/9/19

M3 - Conference contribution

BT - 2017 International Conference on Solid State Devices and Materials (SSDM’17)

CY - Sendai, Japan

ER -