Improved step-graded-channel heterostructure field-effect transistor

Shu Jenn Yu, Wei Chou Hsu, Yih Juan Li, Yeong Jia Chen

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a 1.2 × 100 μm 2 gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9V.

Original languageEnglish
Pages (from-to)5942-5944
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9 A
Publication statusPublished - 2004 Sep 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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