A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a 1.2 × 100 μm 2 gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9V.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 A|
|Publication status||Published - 2004 Sep 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)