Improved step-graded-channel heterostructure field-effect transistor

Shu Jenn Yu; Wei Chou Hsu; Yih Juan Li; Yeong Jia Chen

doi:10.1143/JJAP.43.5942

Improved step-graded-channel heterostructure field-effect transistor

Shu Jenn Yu, Wei Chou Hsu, Yih Juan Li, Yeong Jia Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a 1.2 × 100 μm ² gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9V.

Original language	English
Pages (from-to)	5942-5944
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.43.5942
Publication status	Published - 2004 Sept

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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abstract = "A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a 1.2 × 100 μm 2 gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9V.",

author = "Yu, {Shu Jenn} and Hsu, {Wei Chou} and Li, {Yih Juan} and Chen, {Yeong Jia}",

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AU - Hsu, Wei Chou

AU - Li, Yih Juan

AU - Chen, Yeong Jia

PY - 2004/9

Y1 - 2004/9

N2 - A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a 1.2 × 100 μm 2 gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9V.

AB - A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high drain-current density and a large gate-voltage swing can be obtained. For a 1.2 × 100 μm 2 gate, the maximum saturation drain-current density is 373 mA/mm and the maximum extrinsic transconductance is 148 mS/mm with a gate-voltage swing of 1.9V.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Improved step-graded-channel heterostructure field-effect transistor

Abstract

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