Improved temperature-dependent characteristics of a sulfur-passivated AlGaAsInGaAsGaAs pseudomorphic high-electron-mobility transistor

Po Hsien Lai, Ssu I. Fu, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Hung Ming Chuang, Wen Chau Liu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The temperature-dependent characteristics of (N H4) 2 Sx -passivated AlGaAsInGaAsGaAs pseudomorphic high electron mobility transistors were studied and demonstrated. Due to the use of sulfur passivation, remarkable improvements in device performance, including higher forward turn-on voltage, higher reverse breakdown voltage, lower reverse leakage current, higher transconductance, lower on-resistance, more linear operating regime, and superior microwave performance, were obtained. In addition, the sulfur-passivated devices also show good properties in the higher operating temperature regime and relatively thermally stable performance over the operation temperature range 300-510 K. Therefore, the studied device with (N H4) 2 Sx treatment provides promise for high-performance digital and microwave device applications.

Original languageEnglish
Pages (from-to)G632-G635
JournalJournal of the Electrochemical Society
Volume153
Issue number7
DOIs
Publication statusPublished - 2006 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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