TY - JOUR
T1 - Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
AU - Yu, Kuo Hui
AU - Chuang, Hung Ming
AU - Lin, Kun Wei
AU - Cheng, Shiou Ying
AU - Cheng, Chin Chuan
AU - Chen, Jing Yuh
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received March 19, 2002; revised July 8, 2002. This work was supported in part by the National Science Council, Taiwan, R.O.C. under Contract NSC-90-2215-E-006-021. The review of this paper was arranged by Editor C.-P. Lee.
PY - 2002/10
Y1 - 2002/10
N2 - A new InGaP-InGaAs-GaAs double channel pseudomorphic high-electron mobility transistor (DC-PHEMT) has been fabricated successfully. The detailed temperature-dependent performances are investigated. The key features of the studied device are the use of InGaAs DC structure, triple δ-doped carrier supplier layers and good Schottky behavior of InGaP "insulator." For a 1-μm gate length device, the turn-on voltage of 1.46 (1.16) V, gate leakage current of 60 (600) μA/mm at V GD = 15 V, maximum extrinsic transconductance of 162 (145) mS/mm with 310 (260) mA/mm broad operation regime (> 0.9g m, max), output conductance of 0.41 (0.43) mS/mm, and voltage gain of 390 (335) are obtained at T = 300 (480) K, respectively. In addition, good microwave performances with flat and wide operation regime are also obtained.
AB - A new InGaP-InGaAs-GaAs double channel pseudomorphic high-electron mobility transistor (DC-PHEMT) has been fabricated successfully. The detailed temperature-dependent performances are investigated. The key features of the studied device are the use of InGaAs DC structure, triple δ-doped carrier supplier layers and good Schottky behavior of InGaP "insulator." For a 1-μm gate length device, the turn-on voltage of 1.46 (1.16) V, gate leakage current of 60 (600) μA/mm at V GD = 15 V, maximum extrinsic transconductance of 162 (145) mS/mm with 310 (260) mA/mm broad operation regime (> 0.9g m, max), output conductance of 0.41 (0.43) mS/mm, and voltage gain of 390 (335) are obtained at T = 300 (480) K, respectively. In addition, good microwave performances with flat and wide operation regime are also obtained.
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U2 - 10.1109/TED.2002.803628
DO - 10.1109/TED.2002.803628
M3 - Article
AN - SCOPUS:0036773150
SN - 0018-9383
VL - 49
SP - 1687
EP - 1693
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 10
ER -