A new InGaP-InGaAs-GaAs double channel pseudomorphic high-electron mobility transistor (DC-PHEMT) has been fabricated successfully. The detailed temperature-dependent performances are investigated. The key features of the studied device are the use of InGaAs DC structure, triple δ-doped carrier supplier layers and good Schottky behavior of InGaP "insulator." For a 1-μm gate length device, the turn-on voltage of 1.46 (1.16) V, gate leakage current of 60 (600) μA/mm at V GD = 15 V, maximum extrinsic transconductance of 162 (145) mS/mm with 310 (260) mA/mm broad operation regime (> 0.9g m, max), output conductance of 0.41 (0.43) mS/mm, and voltage gain of 390 (335) are obtained at T = 300 (480) K, respectively. In addition, good microwave performances with flat and wide operation regime are also obtained.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering