Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

Kuo Hui Yu, Hung Ming Chuang, Kun Wei Lin, Shiou Ying Cheng, Chin Chuan Cheng, Jing Yuh Chen, Wen Chau Liu

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42 Citations (Scopus)

Abstract

A new InGaP-InGaAs-GaAs double channel pseudomorphic high-electron mobility transistor (DC-PHEMT) has been fabricated successfully. The detailed temperature-dependent performances are investigated. The key features of the studied device are the use of InGaAs DC structure, triple δ-doped carrier supplier layers and good Schottky behavior of InGaP "insulator." For a 1-μm gate length device, the turn-on voltage of 1.46 (1.16) V, gate leakage current of 60 (600) μA/mm at V GD = 15 V, maximum extrinsic transconductance of 162 (145) mS/mm with 310 (260) mA/mm broad operation regime (> 0.9g m, max), output conductance of 0.41 (0.43) mS/mm, and voltage gain of 390 (335) are obtained at T = 300 (480) K, respectively. In addition, good microwave performances with flat and wide operation regime are also obtained.

Original languageEnglish
Pages (from-to)1687-1693
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume49
Issue number10
DOIs
Publication statusPublished - 2002 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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