The thermal stability performance of a metamorphic high electron mobility transistor (MHEMT) with a double δ -doped structure is studied and demonstrated. Due to the wide-gap and high-resistivity undoped InAlAs Schottky and buffer layer, the leakage current could be effectively reduced at higher temperature. The excellent maximum drain saturation current of 544 (524) mA/mm and maximum extrinsic transconductance of 361 (312) mS/mm are obtained at 300 (510) K for a 0.6×100 μ m2 gate dimension MHEMT. In addition, an excellent thermal threshold voltage coefficient ( Vth /T) of 0.06 mV/K is found when the temperature is increased from 330 to 510 K.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Materials Science(all)
- Chemical Engineering(all)
- Physical and Theoretical Chemistry