Improved thermal stability performance of an MHEMT with a double δ -doped structure

Chien Chang Huang, Yi Jung Liu, Tai You Chen, Chi Shiang Hsu, Chung I. Kao, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The thermal stability performance of a metamorphic high electron mobility transistor (MHEMT) with a double δ -doped structure is studied and demonstrated. Due to the wide-gap and high-resistivity undoped InAlAs Schottky and buffer layer, the leakage current could be effectively reduced at higher temperature. The excellent maximum drain saturation current of 544 (524) mA/mm and maximum extrinsic transconductance of 361 (312) mS/mm are obtained at 300 (510) K for a 0.6×100 μ m2 gate dimension MHEMT. In addition, an excellent thermal threshold voltage coefficient ( Vth /T) of 0.06 mV/K is found when the temperature is increased from 330 to 510 K.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number1
Publication statusPublished - 2011 Jan 24

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry


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