Improved thermal stability performance of an MHEMT with a double δ -doped structure

Chien Chang Huang; Yi Jung Liu; Tai You Chen; Chi Shiang Hsu; Chung I. Kao; Wen-Chau Liu

doi:10.1149/1.3511720

Improved thermal stability performance of an MHEMT with a double δ -doped structure

Chien Chang Huang, Yi Jung Liu, Tai You Chen, Chi Shiang Hsu, Chung I. Kao, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The thermal stability performance of a metamorphic high electron mobility transistor (MHEMT) with a double δ -doped structure is studied and demonstrated. Due to the wide-gap and high-resistivity undoped InAlAs Schottky and buffer layer, the leakage current could be effectively reduced at higher temperature. The excellent maximum drain saturation current of 544 (524) mA/mm and maximum extrinsic transconductance of 361 (312) mS/mm are obtained at 300 (510) K for a 0.6×100 μ m² gate dimension MHEMT. In addition, an excellent thermal threshold voltage coefficient ( V_th /T) of 0.06 mV/K is found when the temperature is increased from 330 to 510 K.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	1
DOIs	https://doi.org/10.1149/1.3511720
Publication status	Published - 2011 Jan 24

All Science Journal Classification (ASJC) codes

Electrochemistry
Electrical and Electronic Engineering
Materials Science(all)
Chemical Engineering(all)
Physical and Theoretical Chemistry

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abstract = "The thermal stability performance of a metamorphic high electron mobility transistor (MHEMT) with a double δ -doped structure is studied and demonstrated. Due to the wide-gap and high-resistivity undoped InAlAs Schottky and buffer layer, the leakage current could be effectively reduced at higher temperature. The excellent maximum drain saturation current of 544 (524) mA/mm and maximum extrinsic transconductance of 361 (312) mS/mm are obtained at 300 (510) K for a 0.6×100 μ m2 gate dimension MHEMT. In addition, an excellent thermal threshold voltage coefficient ( Vth /T) of 0.06 mV/K is found when the temperature is increased from 330 to 510 K.",

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T1 - Improved thermal stability performance of an MHEMT with a double δ -doped structure

AU - Huang, Chien Chang

AU - Liu, Yi Jung

AU - Chen, Tai You

AU - Hsu, Chi Shiang

AU - Kao, Chung I.

AU - Liu, Wen-Chau

PY - 2011/1/24

Y1 - 2011/1/24

N2 - The thermal stability performance of a metamorphic high electron mobility transistor (MHEMT) with a double δ -doped structure is studied and demonstrated. Due to the wide-gap and high-resistivity undoped InAlAs Schottky and buffer layer, the leakage current could be effectively reduced at higher temperature. The excellent maximum drain saturation current of 544 (524) mA/mm and maximum extrinsic transconductance of 361 (312) mS/mm are obtained at 300 (510) K for a 0.6×100 μ m2 gate dimension MHEMT. In addition, an excellent thermal threshold voltage coefficient ( Vth /T) of 0.06 mV/K is found when the temperature is increased from 330 to 510 K.

AB - The thermal stability performance of a metamorphic high electron mobility transistor (MHEMT) with a double δ -doped structure is studied and demonstrated. Due to the wide-gap and high-resistivity undoped InAlAs Schottky and buffer layer, the leakage current could be effectively reduced at higher temperature. The excellent maximum drain saturation current of 544 (524) mA/mm and maximum extrinsic transconductance of 361 (312) mS/mm are obtained at 300 (510) K for a 0.6×100 μ m2 gate dimension MHEMT. In addition, an excellent thermal threshold voltage coefficient ( Vth /T) of 0.06 mV/K is found when the temperature is increased from 330 to 510 K.

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Improved thermal stability performance of an MHEMT with a double δ -doped structure

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