Improvement of AZO/p-a-SiC:H contact by the p-μc-Si:H insertion layer and its application to a-Si:H solar cells

Ping Kuan Chang, Fu Ji Tsai, Chun Hsiung Lu, Chih Hung Yeh, Na Fu Wang, Mau-phon Houng

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper considers the method to obtain a good electric contact between the p-layer and the aluminum-doped zinc oxide (AZO) transparent conducting layer. By inserting a thin p-type hydrogenated microcrystalline silicon (p-μc-Si:H) layer between AZO and p-type hydrogenated amorphous silicon carbide layer, the photovoltaic performances of amorphous silicon solar cells can be improved due to reduction of the surface potential barrier. As the results, remarkable improvements on V oc, J sc and FF have been achieved with the incorporation of p-μc-Si:H layers. Various p-μc-Si:H layers are investigated with regard to different hydrogen dilution (H 2/SiH 4) ratios and thicknesses. The experimentally derived optimum parameters for p-μc-Si:H films are H 2/SiH 4 ratio of 150 and thickness of 9 nm. This unique treatment results in an optimized solar cell with V oc = 910 mV, J sc = 13.55 mA/cm 2, FF = 0.71 and efficiency = 8.8%.

Original languageEnglish
Pages (from-to)48-51
Number of pages4
JournalSolid-State Electronics
Volume72
DOIs
Publication statusPublished - 2012 Jun 1

Fingerprint

Zinc Oxide
Zinc oxide
Aluminum
Amorphous silicon
zinc oxides
insertion
Solar cells
solar cells
Electric contacts
aluminum
Microcrystalline silicon
Hydrogen
Silicon solar cells
Dilution
Surface potential
Silicon carbide
amorphous silicon
silicon carbides
dilution
electric contacts

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Chang, Ping Kuan ; Tsai, Fu Ji ; Lu, Chun Hsiung ; Yeh, Chih Hung ; Wang, Na Fu ; Houng, Mau-phon. / Improvement of AZO/p-a-SiC:H contact by the p-μc-Si:H insertion layer and its application to a-Si:H solar cells. In: Solid-State Electronics. 2012 ; Vol. 72. pp. 48-51.
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abstract = "This paper considers the method to obtain a good electric contact between the p-layer and the aluminum-doped zinc oxide (AZO) transparent conducting layer. By inserting a thin p-type hydrogenated microcrystalline silicon (p-μc-Si:H) layer between AZO and p-type hydrogenated amorphous silicon carbide layer, the photovoltaic performances of amorphous silicon solar cells can be improved due to reduction of the surface potential barrier. As the results, remarkable improvements on V oc, J sc and FF have been achieved with the incorporation of p-μc-Si:H layers. Various p-μc-Si:H layers are investigated with regard to different hydrogen dilution (H 2/SiH 4) ratios and thicknesses. The experimentally derived optimum parameters for p-μc-Si:H films are H 2/SiH 4 ratio of 150 and thickness of 9 nm. This unique treatment results in an optimized solar cell with V oc = 910 mV, J sc = 13.55 mA/cm 2, FF = 0.71 and efficiency = 8.8{\%}.",
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Improvement of AZO/p-a-SiC:H contact by the p-μc-Si:H insertion layer and its application to a-Si:H solar cells. / Chang, Ping Kuan; Tsai, Fu Ji; Lu, Chun Hsiung; Yeh, Chih Hung; Wang, Na Fu; Houng, Mau-phon.

In: Solid-State Electronics, Vol. 72, 01.06.2012, p. 48-51.

Research output: Contribution to journalArticle

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AU - Chang, Ping Kuan

AU - Tsai, Fu Ji

AU - Lu, Chun Hsiung

AU - Yeh, Chih Hung

AU - Wang, Na Fu

AU - Houng, Mau-phon

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