TY - GEN
T1 - Improvement of blue GaN-based light-emitting diodes with nanosphere layers
AU - Su, Y. K.
AU - Kao, C. C.
AU - Chen, J. J.
AU - Chuang, R. W.
AU - Lin, C. L.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - GaN-based light-emitting diodes (LEDs) with nanosphere layers were fabricated by spin-coating method. It was found that the LEDs with and without nanosphere layers had the same electrical characteristics. With 20 mA current injection, the luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters exceeded that of the LED without nanosphere layers by 5.72% and 9.05%, respectively. The improvement of the luminance intensity is attributed to the periodic structure of nanospher layers increasing the light extraction of photons.
AB - GaN-based light-emitting diodes (LEDs) with nanosphere layers were fabricated by spin-coating method. It was found that the LEDs with and without nanosphere layers had the same electrical characteristics. With 20 mA current injection, the luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters exceeded that of the LED without nanosphere layers by 5.72% and 9.05%, respectively. The improvement of the luminance intensity is attributed to the periodic structure of nanospher layers increasing the light extraction of photons.
UR - http://www.scopus.com/inward/record.url?scp=52649088946&partnerID=8YFLogxK
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U2 - 10.1109/INEC.2008.4585472
DO - 10.1109/INEC.2008.4585472
M3 - Conference contribution
AN - SCOPUS:52649088946
SN - 9781424415731
T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
SP - 214
EP - 216
BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Y2 - 24 March 2008 through 27 March 2008
ER -