Improvement of blue GaN-based light-emitting diodes with nanosphere layers

Y. K. Su, C. C. Kao, J. J. Chen, R. W. Chuang, C. L. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based light-emitting diodes (LEDs) with nanosphere layers were fabricated by spin-coating method. It was found that the LEDs with and without nanosphere layers had the same electrical characteristics. With 20 mA current injection, the luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters exceeded that of the LED without nanosphere layers by 5.72% and 9.05%, respectively. The improvement of the luminance intensity is attributed to the periodic structure of nanospher layers increasing the light extraction of photons.

Original languageEnglish
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages214-216
Number of pages3
DOIs
Publication statusPublished - 2008
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: 2008 Mar 242008 Mar 27

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Other

Other2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
CountryChina
CityShanghai
Period08-03-2408-03-27

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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