Improvement of blue GaN-based light-emitting diodes with nanosphere layers

Y. K. Su; C. C. Kao; J. J. Chen; R. W. Chuang; C. L. Lin

doi:10.1109/INEC.2008.4585472

Improvement of blue GaN-based light-emitting diodes with nanosphere layers

Y. K. Su, C. C. Kao, J. J. Chen, R. W. Chuang, C. L. Lin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaN-based light-emitting diodes (LEDs) with nanosphere layers were fabricated by spin-coating method. It was found that the LEDs with and without nanosphere layers had the same electrical characteristics. With 20 mA current injection, the luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters exceeded that of the LED without nanosphere layers by 5.72% and 9.05%, respectively. The improvement of the luminance intensity is attributed to the periodic structure of nanospher layers increasing the light extraction of photons.

Original language	English
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	214-216
Number of pages	3
DOIs	https://doi.org/10.1109/INEC.2008.4585472
Publication status	Published - 2008
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: 2008 Mar 24 → 2008 Mar 27

Publication series

Name	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Other

Other	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country	China
City	Shanghai
Period	08-03-24 → 08-03-27

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2008.4585472

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title = "Improvement of blue GaN-based light-emitting diodes with nanosphere layers",

abstract = "GaN-based light-emitting diodes (LEDs) with nanosphere layers were fabricated by spin-coating method. It was found that the LEDs with and without nanosphere layers had the same electrical characteristics. With 20 mA current injection, the luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters exceeded that of the LED without nanosphere layers by 5.72% and 9.05%, respectively. The improvement of the luminance intensity is attributed to the periodic structure of nanospher layers increasing the light extraction of photons.",

author = "Su, {Y. K.} and Kao, {C. C.} and Chen, {J. J.} and Chuang, {R. W.} and Lin, {C. L.}",

year = "2008",

doi = "10.1109/INEC.2008.4585472",

language = "English",

isbn = "9781424415731",

series = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

pages = "214--216",

booktitle = "2008 2nd IEEE International Nanoelectronics Conference, INEC 2008",

}

Su, YK, Kao, CC, Chen, JJ, Chuang, RW & Lin, CL 2008, Improvement of blue GaN-based light-emitting diodes with nanosphere layers. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585472, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, pp. 214-216, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 08-03-24. https://doi.org/10.1109/INEC.2008.4585472

Improvement of blue GaN-based light-emitting diodes with nanosphere layers. / Su, Y. K.; Kao, C. C.; Chen, J. J.; Chuang, R. W.; Lin, C. L.

2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 214-216 4585472 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - GaN-based light-emitting diodes (LEDs) with nanosphere layers were fabricated by spin-coating method. It was found that the LEDs with and without nanosphere layers had the same electrical characteristics. With 20 mA current injection, the luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters exceeded that of the LED without nanosphere layers by 5.72% and 9.05%, respectively. The improvement of the luminance intensity is attributed to the periodic structure of nanospher layers increasing the light extraction of photons.

AB - GaN-based light-emitting diodes (LEDs) with nanosphere layers were fabricated by spin-coating method. It was found that the LEDs with and without nanosphere layers had the same electrical characteristics. With 20 mA current injection, the luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters exceeded that of the LED without nanosphere layers by 5.72% and 9.05%, respectively. The improvement of the luminance intensity is attributed to the periodic structure of nanospher layers increasing the light extraction of photons.

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