Abstract
In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.
| Original language | English |
|---|---|
| Pages | 261-264 |
| Number of pages | 4 |
| Publication status | Published - 2014 Jan 1 |
| Event | 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China Duration: 2013 Oct 26 → 2013 Nov 1 |
Other
| Other | 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 |
|---|---|
| Country | China |
| City | Qingdao |
| Period | 13-10-26 → 13-11-01 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Management of Technology and Innovation
Cite this
}
Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. / Zeng, X. F.; Chang, Shoou-Jinn; Lo, H. M.; Shei, Shih Chang.
2014. 261-264 Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.Research output: Contribution to conference › Paper
TY - CONF
T1 - Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface
AU - Zeng, X. F.
AU - Chang, Shoou-Jinn
AU - Lo, H. M.
AU - Shei, Shih Chang
PY - 2014/1/1
Y1 - 2014/1/1
N2 - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.
AB - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84896667767&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84896667767&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:84896667767
SP - 261
EP - 264
ER -