Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface

X. F. Zeng, Shoou-Jinn Chang, H. M. Lo, Shih Chang Shei

Research output: Contribution to conferencePaper

Abstract

In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

Original languageEnglish
Pages261-264
Number of pages4
Publication statusPublished - 2014 Jan 1
Event2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China
Duration: 2013 Oct 262013 Nov 1

Other

Other2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
CountryChina
CityQingdao
Period13-10-2613-11-01

Fingerprint

Light emitting diodes
Plasmas
Electrodes
Plasma
Testing
Injection

All Science Journal Classification (ASJC) codes

  • Management of Technology and Innovation

Cite this

Zeng, X. F., Chang, S-J., Lo, H. M., & Shei, S. C. (2014). Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. 261-264. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.
Zeng, X. F. ; Chang, Shoou-Jinn ; Lo, H. M. ; Shei, Shih Chang. / Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.4 p.
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abstract = "In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13{\%} by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49{\%} and 55{\%} of the initial intensity, respectively.",
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year = "2014",
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Zeng, XF, Chang, S-J, Lo, HM & Shei, SC 2014, 'Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface' Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China, 13-10-26 - 13-11-01, pp. 261-264.

Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. / Zeng, X. F.; Chang, Shoou-Jinn; Lo, H. M.; Shei, Shih Chang.

2014. 261-264 Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.

Research output: Contribution to conferencePaper

TY - CONF

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N2 - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

AB - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

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Zeng XF, Chang S-J, Lo HM, Shei SC. Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface. 2014. Paper presented at 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013, Qingdao, China.