Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface

X. F. Zeng; S. J. Chang; H. M. Lo; Shih Chang Shei

Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface

X. F. Zeng, S. J. Chang, H. M. Lo, Shih Chang Shei

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the V_f at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

Original language	English
Pages	261-264
Number of pages	4
Publication status	Published - 2014 Jan 1
Event	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China Duration: 2013 Oct 26 → 2013 Nov 1

Other

Other	2nd International Conference on Innovation, Communication and Engineering, ICICE 2013
Country	China
City	Qingdao
Period	13-10-26 → 13-11-01

All Science Journal Classification (ASJC) codes

Management of Technology and Innovation

Fingerprint Dive into the research topics of 'Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface'. Together they form a unique fingerprint.

Cite this

@conference{f2ea7090eb46461aadece36064400553,

title = "Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface",

abstract = "In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.",

author = "Zeng, {X. F.} and Chang, {S. J.} and Lo, {H. M.} and Shei, {Shih Chang}",

year = "2014",

month = jan,

day = "1",

language = "English",

pages = "261--264",

note = "2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 ; Conference date: 26-10-2013 Through 01-11-2013",

}

TY - CONF

T1 - Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface

AU - Zeng, X. F.

AU - Chang, S. J.

AU - Lo, H. M.

AU - Shei, Shih Chang

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

AB - In this paper, we successfully demonstrated that the Ar plasma-damaged p-GaN surface increased the resistance of ITO/P-GaN contact serving as injection current deflection layer under the electrode pad. It was found that both of the Vf at 20 mA were approximately 3.3V. Under a 20mA current injection, it was found that output powers were 9.8 and 11.08mW for conventional LEDs and LEDs with Ar plasma damaged p-GaN surfaces respectively. We can increase the LED output power by 13% by inserting the p-GaN surface damaged by Ar plasma under the electrode pad. It was also found that after testing 72 hours, the half lifetimes of conventional LEDs and LEDs with Ar plasma damaged p-GaN surface were about 49% and 55% of the initial intensity, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84896667767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896667767&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84896667767

SP - 261

EP - 264

T2 - 2nd International Conference on Innovation, Communication and Engineering, ICICE 2013

Y2 - 26 October 2013 through 1 November 2013

ER -