@article{24843883c7ed46acb638f1cdcc9dd08b,
title = "Improvement of electrical and reliability properties of tantalum pentoxide by high-density plasma (HDP) annealing in N2O",
abstract = "This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) tantalum pentoxide (Ta2O5) films by a new post-deposition annealing technique using high-density plasma (HDP). Experimental results indicate that excited oxygen atoms generated by N2O decomposition from HDP annealing can effectively reduce the carbon and hydrogen impurity concentrations and repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: HDP O2 annealing and conventional plasma O2 annealing. The comparison reveals that HDP N2O annealing has the lowest leakage current and superior time-dependent dielectric breakdown (TDDB) reliability.",
author = "Chang, {S. J.} and Lee, {J. S.} and Chen, {J. F.} and Sun, {S. C.} and Liu, {C. H.} and Liaw, {U. H.} and Huang, {B. R.}",
note = "Funding Information: Manuscript received July 15, 2002; revised August 9, 2002. This work was supported by the National Science Council of Taiwan, R.O.C., under Research Grants NSC 90-2215-E-008-043 and NSC 90-2112-M-008-046. The review of this letter was arranged by Editor T.-J. King. S. J. Chang, J. S. Lee, and J. F. Chen are with the Institute of Microelectronics and the Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Sun is with the R&D Department, Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu 300, Taiwan, R.O.C. C. H. Liu is with the Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui 737, Taiwan, R.O.C. U. H. Liaw is with the Department of Electronic Engineering, Chin-Min College, To-Fen 351, Taiwan, R.O.C. B. R. Huang is with the Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan, R.O.C. Digital Object Identifier 10.1109/LED.2002.805029 Fig. 1. Leakage current characteristics of 10-nm thick Ta O capacitors before and after annealing processes with the gate negatively biased.",
year = "2002",
month = nov,
doi = "10.1109/LED.2002.805029",
language = "English",
volume = "23",
pages = "643--645",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}