Improvement of electrical and reliability properties of tantalum pentoxide by high-density plasma (HDP) annealing in N2O

S. J. Chang, J. S. Lee, J. F. Chen, S. C. Sun, C. H. Liu, U. H. Liaw, B. R. Huang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) tantalum pentoxide (Ta2O5) films by a new post-deposition annealing technique using high-density plasma (HDP). Experimental results indicate that excited oxygen atoms generated by N2O decomposition from HDP annealing can effectively reduce the carbon and hydrogen impurity concentrations and repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: HDP O2 annealing and conventional plasma O2 annealing. The comparison reveals that HDP N2O annealing has the lowest leakage current and superior time-dependent dielectric breakdown (TDDB) reliability.

Original languageEnglish
Pages (from-to)643-645
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number11
DOIs
Publication statusPublished - 2002 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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