Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing

Hau Yuan Huang; Shui Jinn Wang; Chien Hung Wu; Chien Yuan Lu

doi:10.1007/s13391-014-3327-z

Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing

Hau Yuan Huang, Shui Jinn Wang, Chien Hung Wu, Chien Yuan Lu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The influence of 248-nm KrF excimer laser annealing (ELA) with energy density between 0 and 400 mJ/cm² on the electrical behavior of indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) is investigated. The experimental results show that the saturation mobility and subthreshold swing are improved from 12.4 cm²/Vs and 100 mV/dec without ELA to 17.8 cm²/Vs and 75 mV/dec, respectively, by applying a 300 mJ/cm² laser pulse after the source/drain deposition, while maintaining an almost unchanged turn-off voltage. Such improvements are attributed to the increase in the oxygen vacancies and reduction in the bulk traps in the InGaZnO channel.

Original language	English
Pages (from-to)	899-902
Number of pages	4
Journal	Electronic Materials Letters
Volume	10
Issue number	5
DOIs	https://doi.org/10.1007/s13391-014-3327-z
Publication status	Published - 2014 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1007/s13391-014-3327-z

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title = "Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing",

abstract = "The influence of 248-nm KrF excimer laser annealing (ELA) with energy density between 0 and 400 mJ/cm2 on the electrical behavior of indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) is investigated. The experimental results show that the saturation mobility and subthreshold swing are improved from 12.4 cm2/Vs and 100 mV/dec without ELA to 17.8 cm2/Vs and 75 mV/dec, respectively, by applying a 300 mJ/cm2 laser pulse after the source/drain deposition, while maintaining an almost unchanged turn-off voltage. Such improvements are attributed to the increase in the oxygen vacancies and reduction in the bulk traps in the InGaZnO channel.",

author = "Huang, {Hau Yuan} and Wang, {Shui Jinn} and Wu, {Chien Hung} and Lu, {Chien Yuan}",

note = "Publisher Copyright: {\textcopyright} 2014, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.",

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doi = "10.1007/s13391-014-3327-z",

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T1 - Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing

AU - Huang, Hau Yuan

AU - Wang, Shui Jinn

AU - Wu, Chien Hung

AU - Lu, Chien Yuan

PY - 2014/9/1

Y1 - 2014/9/1

N2 - The influence of 248-nm KrF excimer laser annealing (ELA) with energy density between 0 and 400 mJ/cm2 on the electrical behavior of indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) is investigated. The experimental results show that the saturation mobility and subthreshold swing are improved from 12.4 cm2/Vs and 100 mV/dec without ELA to 17.8 cm2/Vs and 75 mV/dec, respectively, by applying a 300 mJ/cm2 laser pulse after the source/drain deposition, while maintaining an almost unchanged turn-off voltage. Such improvements are attributed to the increase in the oxygen vacancies and reduction in the bulk traps in the InGaZnO channel.

AB - The influence of 248-nm KrF excimer laser annealing (ELA) with energy density between 0 and 400 mJ/cm2 on the electrical behavior of indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) is investigated. The experimental results show that the saturation mobility and subthreshold swing are improved from 12.4 cm2/Vs and 100 mV/dec without ELA to 17.8 cm2/Vs and 75 mV/dec, respectively, by applying a 300 mJ/cm2 laser pulse after the source/drain deposition, while maintaining an almost unchanged turn-off voltage. Such improvements are attributed to the increase in the oxygen vacancies and reduction in the bulk traps in the InGaZnO channel.

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Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing

Abstract

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