TY - JOUR
T1 - Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid-phase oxidized InAlAs as gate insulator
AU - Lee, Kuan Wei
AU - Lee, Kai Lin
AU - Lin, Xian Zheng
AU - Tu, Chao Hsien
AU - Wang, Yeong Her
N1 - Funding Information:
Manuscript received October 24, 2006. This work was supported in part by the National Science Council under Contract NSC 93-2215-E-006-003 and Contract NSC 94-2215-E-006-058 and in part by the Ministry of Education Program for Promoting the Academic Excellence of Universities under Grant A-91E-FA08-1-4. The review of this paper was arranged by Editor Y.-J. Chan.
PY - 2007/3
Y1 - 2007/3
N2 - The oxidation of InAlAs and its application to InAlAs/InGaAs metal-oxide-semiconductor metamorphic high-electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid-phase solution at near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits a larger tolerance to gate bias, higher breakdown voltage, lower subthreshold current, improved gate leakage current with the effectively suppressed impact ionization effect, and improved radio-frequency performance. Consequently, the liquid-phase oxidation may also be used to produce gate oxides and as an effective passivation on III-V compound semiconductor devices.
AB - The oxidation of InAlAs and its application to InAlAs/InGaAs metal-oxide-semiconductor metamorphic high-electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid-phase solution at near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits a larger tolerance to gate bias, higher breakdown voltage, lower subthreshold current, improved gate leakage current with the effectively suppressed impact ionization effect, and improved radio-frequency performance. Consequently, the liquid-phase oxidation may also be used to produce gate oxides and as an effective passivation on III-V compound semiconductor devices.
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U2 - 10.1109/TED.2006.890599
DO - 10.1109/TED.2006.890599
M3 - Article
AN - SCOPUS:33947725944
SN - 0018-9383
VL - 54
SP - 418
EP - 424
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
ER -