Improvement of impact ionization effect and subthreshold current in InAlAs/InGaAs metal-oxide-semiconductor metamorphic HEMT with a liquid-phase oxidized InAlAs as gate insulator

Kuan Wei Lee, Kai Lin Lee, Xian Zheng Lin, Chao Hsien Tu, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The oxidation of InAlAs and its application to InAlAs/InGaAs metal-oxide-semiconductor metamorphic high-electron mobility transistors (MOS-MHEMTs) are demonstrated in this study. After the highly selective gate recessing of InGaAs/InAlAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing the InAlAs layer in a liquid-phase solution at near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits a larger tolerance to gate bias, higher breakdown voltage, lower subthreshold current, improved gate leakage current with the effectively suppressed impact ionization effect, and improved radio-frequency performance. Consequently, the liquid-phase oxidation may also be used to produce gate oxides and as an effective passivation on III-V compound semiconductor devices.

Original languageEnglish
Pages (from-to)418-424
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume54
Issue number3
DOIs
Publication statusPublished - 2007 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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