Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

Ru Chin Tu, Chun Ju Tun, J. K. Sheu, Wei Hong Kuo, Te Chung Wang, Ching En Tsai, Jung Tsung Hsu, Jim Chi, Gou Chung Chi

Research output: Contribution to journalLetter

17 Citations (Scopus)

Abstract

InGaN/GaN multiple-quantum-well laser diode (LD) structures, including a Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer, were grown on c-face sapphire substrate by metalorganic vapor-phase epitaxy. The In0.23Ga0.77N/GaN(n+)-GaN(p) tunneling junction, which used the low-resistivity n+-In0.23Ga0.77N/GaN SPS instead of the high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a "quasi-ohmic" contact. Experimental results indicate that the LDs with n+-In0.23Ga0.77N/GaN SPS contacting layer can achieve a lower threshold current and longer lasing duration under pulsed operation. Moreover, when the input pulse width was lengthened from 300 ns to 2 μs, the lasing duration of the LD with Pt ohmic contact was three times longer than that of the LD with Ni/Au ohmic contact. Therefore, one would like to conclude that nitride-based LDs with an SPS reversed-tunneling contact layer will significantly reduce the contact resistance of an anode electrode and thereby increase the thermal stability of the device reliability.

Original languageEnglish
Pages (from-to)206-208
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number4
DOIs
Publication statusPublished - 2003 Apr 1

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Ohmic contacts
Semiconductor lasers
Quantum well lasers
Metallorganic vapor phase epitaxy
Tunnel junctions
Aluminum Oxide
Contact resistance
Sapphire
Nitrides
Semiconductor quantum wells
Anodes
Thermodynamic stability
Electrodes
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tu, Ru Chin ; Tun, Chun Ju ; Sheu, J. K. ; Kuo, Wei Hong ; Wang, Te Chung ; Tsai, Ching En ; Hsu, Jung Tsung ; Chi, Jim ; Chi, Gou Chung. / Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer. In: IEEE Electron Device Letters. 2003 ; Vol. 24, No. 4. pp. 206-208.
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abstract = "InGaN/GaN multiple-quantum-well laser diode (LD) structures, including a Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer, were grown on c-face sapphire substrate by metalorganic vapor-phase epitaxy. The In0.23Ga0.77N/GaN(n+)-GaN(p) tunneling junction, which used the low-resistivity n+-In0.23Ga0.77N/GaN SPS instead of the high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a {"}quasi-ohmic{"} contact. Experimental results indicate that the LDs with n+-In0.23Ga0.77N/GaN SPS contacting layer can achieve a lower threshold current and longer lasing duration under pulsed operation. Moreover, when the input pulse width was lengthened from 300 ns to 2 μs, the lasing duration of the LD with Pt ohmic contact was three times longer than that of the LD with Ni/Au ohmic contact. Therefore, one would like to conclude that nitride-based LDs with an SPS reversed-tunneling contact layer will significantly reduce the contact resistance of an anode electrode and thereby increase the thermal stability of the device reliability.",
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Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer. / Tu, Ru Chin; Tun, Chun Ju; Sheu, J. K.; Kuo, Wei Hong; Wang, Te Chung; Tsai, Ching En; Hsu, Jung Tsung; Chi, Jim; Chi, Gou Chung.

In: IEEE Electron Device Letters, Vol. 24, No. 4, 01.04.2003, p. 206-208.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

AU - Tu, Ru Chin

AU - Tun, Chun Ju

AU - Sheu, J. K.

AU - Kuo, Wei Hong

AU - Wang, Te Chung

AU - Tsai, Ching En

AU - Hsu, Jung Tsung

AU - Chi, Jim

AU - Chi, Gou Chung

PY - 2003/4/1

Y1 - 2003/4/1

N2 - InGaN/GaN multiple-quantum-well laser diode (LD) structures, including a Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer, were grown on c-face sapphire substrate by metalorganic vapor-phase epitaxy. The In0.23Ga0.77N/GaN(n+)-GaN(p) tunneling junction, which used the low-resistivity n+-In0.23Ga0.77N/GaN SPS instead of the high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a "quasi-ohmic" contact. Experimental results indicate that the LDs with n+-In0.23Ga0.77N/GaN SPS contacting layer can achieve a lower threshold current and longer lasing duration under pulsed operation. Moreover, when the input pulse width was lengthened from 300 ns to 2 μs, the lasing duration of the LD with Pt ohmic contact was three times longer than that of the LD with Ni/Au ohmic contact. Therefore, one would like to conclude that nitride-based LDs with an SPS reversed-tunneling contact layer will significantly reduce the contact resistance of an anode electrode and thereby increase the thermal stability of the device reliability.

AB - InGaN/GaN multiple-quantum-well laser diode (LD) structures, including a Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer, were grown on c-face sapphire substrate by metalorganic vapor-phase epitaxy. The In0.23Ga0.77N/GaN(n+)-GaN(p) tunneling junction, which used the low-resistivity n+-In0.23Ga0.77N/GaN SPS instead of the high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a "quasi-ohmic" contact. Experimental results indicate that the LDs with n+-In0.23Ga0.77N/GaN SPS contacting layer can achieve a lower threshold current and longer lasing duration under pulsed operation. Moreover, when the input pulse width was lengthened from 300 ns to 2 μs, the lasing duration of the LD with Pt ohmic contact was three times longer than that of the LD with Ni/Au ohmic contact. Therefore, one would like to conclude that nitride-based LDs with an SPS reversed-tunneling contact layer will significantly reduce the contact resistance of an anode electrode and thereby increase the thermal stability of the device reliability.

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U2 - 10.1109/LED.2003.810889

DO - 10.1109/LED.2003.810889

M3 - Letter

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EP - 208

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

ER -