Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

Ru Chin Tu, Chun Ju Tun, J. K. Sheu, Wei Hong Kuo, Te Chung Wang, Ching En Tsai, Jung Tsung Hsu, Jim Chi, Gou Chung Chi

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17 Citations (Scopus)


InGaN/GaN multiple-quantum-well laser diode (LD) structures, including a Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer, were grown on c-face sapphire substrate by metalorganic vapor-phase epitaxy. The In0.23Ga0.77N/GaN(n+)-GaN(p) tunneling junction, which used the low-resistivity n+-In0.23Ga0.77N/GaN SPS instead of the high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a "quasi-ohmic" contact. Experimental results indicate that the LDs with n+-In0.23Ga0.77N/GaN SPS contacting layer can achieve a lower threshold current and longer lasing duration under pulsed operation. Moreover, when the input pulse width was lengthened from 300 ns to 2 μs, the lasing duration of the LD with Pt ohmic contact was three times longer than that of the LD with Ni/Au ohmic contact. Therefore, one would like to conclude that nitride-based LDs with an SPS reversed-tunneling contact layer will significantly reduce the contact resistance of an anode electrode and thereby increase the thermal stability of the device reliability.

Original languageEnglish
Pages (from-to)206-208
Number of pages3
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2003 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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