Improvement of interpoly dielectric characteristics by plasma nitridation and oxidation for future NAND flash memory

Ching Yuan Ho, Chenhsin Lien, Y. Sakamoto, Ru Jye Yang, Hiro Fijita, C. H. Liu, Y. M. Lin, Steven Pittikoun, S. Aritome

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this letter, plasma nitridation and oxidation on interpoly dielectric (IPD; SiO2-SiN-SiO2) for cell programming speed and reliabilities are investigated. Nitrided top oxide with N2 plasma shows excellent physical and electrical properties in terms of edge profile on IPD and fast programming voltage. However, plasma nitridation on a floating gate suffers from data retention problems that result from nitridelike residue along the word line. A method to densify and reoxidize bottom oxide with O2 plasma oxidation is proposed for leakage path inhibition and data retention improvement.

Original languageEnglish
Pages (from-to)1199-1202
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number11
DOIs
Publication statusPublished - 2008 Nov 6

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Ho, C. Y., Lien, C., Sakamoto, Y., Yang, R. J., Fijita, H., Liu, C. H., Lin, Y. M., Pittikoun, S., & Aritome, S. (2008). Improvement of interpoly dielectric characteristics by plasma nitridation and oxidation for future NAND flash memory. IEEE Electron Device Letters, 29(11), 1199-1202. https://doi.org/10.1109/LED.2008.2004972