Improvement of mobility in ZnO thin film transistor with an oxygen enriched MgO gate dielectric

Wei Yu Chen, Jiann Shing Jeng, Jen-Sue Chen

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The performance of bottom-gate ZnO thin film transistors (TFTs) using MgO gate dielectrics evaporated with andwithout introducing oxygen have been investigated. The oxygen introduced during MgO deposition improves the field-effect mobility significantly as compared to the device without introducing oxygen during MgO deposition. The oxygen-introduced MgO exhibits a dielectric constant of 10.9 and the field-effect mobility of the TFT device is enhanced to 78.3 cm2/V s. The threshold voltages can also be related to whether the oxygen is introduced into MgO or not. The interface between oxygen-introduced MgO and ZnO is examined and its connection with mobility enhancement is discussed.

Original languageEnglish
JournalECS Solid State Letters
Volume1
Issue number5
DOIs
Publication statusPublished - 2012 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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