Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature

Ru Chin Tu, Chun Ju Tun, Shyi Ming Pan, Chang Cheng Chuo, J. K. Sheu, Ching En Tsai, Te Chung Wang, Gou Chung Chi

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vapor phase epitaxy system. LEDs with AlGaN EB layers grown at low temperature (LT) were found more effectively to prevent electron overflow than conventional LEDs with an AlGaN one grown at high temperature (HT). The electroluminescent intensity of LEDs with an LT-grown AlGaN layer was nearly three times greater than that of LEDs with an HT-grown AlGaN. Additionally, the LEDs with an LT-grown AlGaN layer in H2 ambient were found to increase the leakage current by three orders of magnitude and reduce the efficiency of emission.

Original languageEnglish
Pages (from-to)1342-1344
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number10
DOIs
Publication statusPublished - 2003 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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