Improvement of peak-to-valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

Mau-phon Houng, Yeong-Her Wang, C. L. Shen, J. F. Chen, A. Y. Cho

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19 Citations (Scopus)

Abstract

InAs blocking layer is incorporated into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure to improve the peak-to-valley ratios. It is found the ratio rises to 21 at room temperature and the peak current density keeps nearly constant for InAs layer reaches 30 A and then both of them decreases with the increase of InAs thickness. However, while the InAs blocking layer further increases to 240 A, the I-V characteristic shows multiple negative differential resistance behavior. These interesting phenomena can be modeled to be due to the coupling effect of InAs blocking layer and GaSb well layer.

Original languageEnglish
Pages (from-to)713-715
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number6
DOIs
Publication statusPublished - 1992 Dec 1

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resonant tunneling
valleys
current density
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Improvement of peak-to-valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure",
abstract = "InAs blocking layer is incorporated into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure to improve the peak-to-valley ratios. It is found the ratio rises to 21 at room temperature and the peak current density keeps nearly constant for InAs layer reaches 30 A and then both of them decreases with the increase of InAs thickness. However, while the InAs blocking layer further increases to 240 A, the I-V characteristic shows multiple negative differential resistance behavior. These interesting phenomena can be modeled to be due to the coupling effect of InAs blocking layer and GaSb well layer.",
author = "Mau-phon Houng and Yeong-Her Wang and Shen, {C. L.} and Chen, {J. F.} and Cho, {A. Y.}",
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T1 - Improvement of peak-to-valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

AU - Houng, Mau-phon

AU - Wang, Yeong-Her

AU - Shen, C. L.

AU - Chen, J. F.

AU - Cho, A. Y.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - InAs blocking layer is incorporated into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure to improve the peak-to-valley ratios. It is found the ratio rises to 21 at room temperature and the peak current density keeps nearly constant for InAs layer reaches 30 A and then both of them decreases with the increase of InAs thickness. However, while the InAs blocking layer further increases to 240 A, the I-V characteristic shows multiple negative differential resistance behavior. These interesting phenomena can be modeled to be due to the coupling effect of InAs blocking layer and GaSb well layer.

AB - InAs blocking layer is incorporated into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure to improve the peak-to-valley ratios. It is found the ratio rises to 21 at room temperature and the peak current density keeps nearly constant for InAs layer reaches 30 A and then both of them decreases with the increase of InAs thickness. However, while the InAs blocking layer further increases to 240 A, the I-V characteristic shows multiple negative differential resistance behavior. These interesting phenomena can be modeled to be due to the coupling effect of InAs blocking layer and GaSb well layer.

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