An incremental poly etching method can improve the poly pimple defect-induced device mismatch on the static noise margin (SNM) of 65-nm-node low-power 6T-SRAM. The improvement on circuit level is examined by the yield of scan chain and memory built-in self-test (MBIST), which is known to correlate well to process-induced defects.
|Number of pages||4|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 2010 Apr|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering