Improvement of resistive memory properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/CH3NH3PbI3 based device by potassium iodide additives

Chuan Feng Shih, Hsuan Ta Wu, Wan Lin Tsai, Ching Chich Leu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


In this study, a glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/CH3NH3PbI3 (MAPbI3)/poly(methyl methacrylate) (PMMA)/Al nonvolatile memory device is demonstrated. The MAPbI3 film is prepared on top of the PEDOT:PSS by a two-step process, showing a bipolar resistive switching character. Because PEDOT:PSS is widely used as a hole transporting layer for a planar heterojunction perovskite solar cell, the demonstrated memory property of PEDOT:PSS/MAPbI3 combination opens up the application potential for multifunctional optoelectronic memory. The device is improved by introducing potassium iodide (KI) as an additive to ameliorate the quality of MAPbI3 material and PEDOT:PSS/MAPbI3 interface. As compared with the pristine MAPbI3, the KI-doped perovskite device exhibits a resistive switching ON/OFF ratio of 103, better endurance and more stable retention. The KI additive is helpful for forming uniform crystalline grain, high-compact structure and passivation of defect states for MAPbI3 film and interface, which are the main reasons to the improved memory properties. Finally, we suggest that KI has great potential to be used as an additive for constructing a high performance perovskite memory device.

Original languageEnglish
Pages (from-to)478-485
Number of pages8
JournalJournal of Alloys and Compounds
Publication statusPublished - 2019 Apr 30

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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