Abstract
In this study, a glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/CH3NH3PbI3 (MAPbI3)/poly(methyl methacrylate) (PMMA)/Al nonvolatile memory device is demonstrated. The MAPbI3 film is prepared on top of the PEDOT:PSS by a two-step process, showing a bipolar resistive switching character. Because PEDOT:PSS is widely used as a hole transporting layer for a planar heterojunction perovskite solar cell, the demonstrated memory property of PEDOT:PSS/MAPbI3 combination opens up the application potential for multifunctional optoelectronic memory. The device is improved by introducing potassium iodide (KI) as an additive to ameliorate the quality of MAPbI3 material and PEDOT:PSS/MAPbI3 interface. As compared with the pristine MAPbI3, the KI-doped perovskite device exhibits a resistive switching ON/OFF ratio of 103, better endurance and more stable retention. The KI additive is helpful for forming uniform crystalline grain, high-compact structure and passivation of defect states for MAPbI3 film and interface, which are the main reasons to the improved memory properties. Finally, we suggest that KI has great potential to be used as an additive for constructing a high performance perovskite memory device.
| Original language | English |
|---|---|
| Pages (from-to) | 478-485 |
| Number of pages | 8 |
| Journal | Journal of Alloys and Compounds |
| Volume | 783 |
| DOIs | |
| Publication status | Published - 2019 Apr 30 |
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
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Improvement of resistive memory properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/CH3NH3PbI3 based device by potassium iodide additives. / Shih, Chuan-Feng; Wu, Hsuan Ta; Tsai, Wan Lin; Leu, Ching Chich.
In: Journal of Alloys and Compounds, Vol. 783, 30.04.2019, p. 478-485.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improvement of resistive memory properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/CH3NH3PbI3 based device by potassium iodide additives
AU - Shih, Chuan-Feng
AU - Wu, Hsuan Ta
AU - Tsai, Wan Lin
AU - Leu, Ching Chich
PY - 2019/4/30
Y1 - 2019/4/30
N2 - In this study, a glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/CH3NH3PbI3 (MAPbI3)/poly(methyl methacrylate) (PMMA)/Al nonvolatile memory device is demonstrated. The MAPbI3 film is prepared on top of the PEDOT:PSS by a two-step process, showing a bipolar resistive switching character. Because PEDOT:PSS is widely used as a hole transporting layer for a planar heterojunction perovskite solar cell, the demonstrated memory property of PEDOT:PSS/MAPbI3 combination opens up the application potential for multifunctional optoelectronic memory. The device is improved by introducing potassium iodide (KI) as an additive to ameliorate the quality of MAPbI3 material and PEDOT:PSS/MAPbI3 interface. As compared with the pristine MAPbI3, the KI-doped perovskite device exhibits a resistive switching ON/OFF ratio of 103, better endurance and more stable retention. The KI additive is helpful for forming uniform crystalline grain, high-compact structure and passivation of defect states for MAPbI3 film and interface, which are the main reasons to the improved memory properties. Finally, we suggest that KI has great potential to be used as an additive for constructing a high performance perovskite memory device.
AB - In this study, a glass/indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/CH3NH3PbI3 (MAPbI3)/poly(methyl methacrylate) (PMMA)/Al nonvolatile memory device is demonstrated. The MAPbI3 film is prepared on top of the PEDOT:PSS by a two-step process, showing a bipolar resistive switching character. Because PEDOT:PSS is widely used as a hole transporting layer for a planar heterojunction perovskite solar cell, the demonstrated memory property of PEDOT:PSS/MAPbI3 combination opens up the application potential for multifunctional optoelectronic memory. The device is improved by introducing potassium iodide (KI) as an additive to ameliorate the quality of MAPbI3 material and PEDOT:PSS/MAPbI3 interface. As compared with the pristine MAPbI3, the KI-doped perovskite device exhibits a resistive switching ON/OFF ratio of 103, better endurance and more stable retention. The KI additive is helpful for forming uniform crystalline grain, high-compact structure and passivation of defect states for MAPbI3 film and interface, which are the main reasons to the improved memory properties. Finally, we suggest that KI has great potential to be used as an additive for constructing a high performance perovskite memory device.
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U2 - 10.1016/j.jallcom.2018.12.369
DO - 10.1016/j.jallcom.2018.12.369
M3 - Article
AN - SCOPUS:85059347819
VL - 783
SP - 478
EP - 485
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
SN - 0925-8388
ER -