TY - JOUR
T1 - Improvement of transient supercooling of thermoelectric coolers through variable semiconductor cross-section
AU - Lv, Hao
AU - Wang, Xiao Dong
AU - Wang, Tian Hu
AU - Cheng, Chin Hsiang
N1 - Funding Information:
This study was partially supported by the National Natural Science Foundation of China (No. 51276060 ), the 111 Project (No. B12034 ), and the Fundamental Research Funds for the Central Universities (No. 13ZX13 ).
PY - 2016/2/15
Y1 - 2016/2/15
N2 - In this work, a new design of thermoelectric cooler (TEC) with variable semiconductor cross-sectional area is proposed to improve its transient supercooling characteristics. Four key evaluation indicators of transient supercooling for the conventional and new designs, including the minimum cold end temperature, maximum temperature overshoot, holding time of transient state, and recovery time ready for next steady-state, are examined and compared by a three-dimensional, transient, and multiphysics model. Two additional effects are observed in the TEC with variable semiconductor cross-sectional area. First, the variable cross-sectional area makes the thermal circuit asymmetric, so that Joule heat is preferentially conducted toward to the end with a larger cross-sectional area. Second, more Joule heat is produced close to the end with a smaller cross-sectional area. The present simulations find that these two effects can be utilized to achieve the desired evaluation indicators by changing the cross-sectional area ratio of hot end to cold end. When a lower cold end temperature, a smaller temperature overshoot, and/or a longer holding time are/is required, a larger cross-sectional area at the cold end is recommended. However, to achieve a shorter recovery time, a smaller cross-sectional area at the cold end is needed.
AB - In this work, a new design of thermoelectric cooler (TEC) with variable semiconductor cross-sectional area is proposed to improve its transient supercooling characteristics. Four key evaluation indicators of transient supercooling for the conventional and new designs, including the minimum cold end temperature, maximum temperature overshoot, holding time of transient state, and recovery time ready for next steady-state, are examined and compared by a three-dimensional, transient, and multiphysics model. Two additional effects are observed in the TEC with variable semiconductor cross-sectional area. First, the variable cross-sectional area makes the thermal circuit asymmetric, so that Joule heat is preferentially conducted toward to the end with a larger cross-sectional area. Second, more Joule heat is produced close to the end with a smaller cross-sectional area. The present simulations find that these two effects can be utilized to achieve the desired evaluation indicators by changing the cross-sectional area ratio of hot end to cold end. When a lower cold end temperature, a smaller temperature overshoot, and/or a longer holding time are/is required, a larger cross-sectional area at the cold end is recommended. However, to achieve a shorter recovery time, a smaller cross-sectional area at the cold end is needed.
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U2 - 10.1016/j.apenergy.2015.11.068
DO - 10.1016/j.apenergy.2015.11.068
M3 - Article
AN - SCOPUS:84951151409
VL - 164
SP - 501
EP - 508
JO - Applied Energy
JF - Applied Energy
SN - 0306-2619
ER -