Abstract
Results of industrial n-type bifacial solar cells, with efficiency as high as 20.63%, are presented within this work. 6" n-Cz wafers were used as substrates. The front emitter and the back surface field were fabricated by boron and phosphorous diffusions respectively. Various surface structures and doping conditions were adopted for comparisons for their influence on cell performance. In addition, three Ag/Al pastes were tested and their related properties were discussed. With the integration of these improved processes, better electrical properties, including higher cell efficiency were obtained.
Original language | English |
---|---|
Pages (from-to) | 643-648 |
Number of pages | 6 |
Journal | Energy Procedia |
Volume | 55 |
DOIs | |
Publication status | Published - 2014 |
Event | 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Netherlands Duration: 2014 Mar 25 → 2014 Mar 27 |
All Science Journal Classification (ASJC) codes
- General Energy