Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Yu Lin Tsai, Chien Chung Lin, Hau Vei Han, Chun Kai Chang, Hsin Chu Chen, Kuo Ju Chen, Wei-Chi Lai, Jinn-Kong Sheu, Fang I. Lai, Peichen Yu, Hao Chung Kuo

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.

Original languageEnglish
Pages (from-to)531-536
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume117
DOIs
Publication statusPublished - 2013 Aug 26

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Distributed Bragg reflectors
Semiconductor quantum wells
Semiconductor quantum dots
Solar cells
Photons
Quantum efficiency
Tin oxides
Indium
Conversion efficiency
Wavelength
Luminescence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

Tsai, Yu Lin ; Lin, Chien Chung ; Han, Hau Vei ; Chang, Chun Kai ; Chen, Hsin Chu ; Chen, Kuo Ju ; Lai, Wei-Chi ; Sheu, Jinn-Kong ; Lai, Fang I. ; Yu, Peichen ; Kuo, Hao Chung. / Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors. In: Solar Energy Materials and Solar Cells. 2013 ; Vol. 117. pp. 531-536.
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Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors. / Tsai, Yu Lin; Lin, Chien Chung; Han, Hau Vei; Chang, Chun Kai; Chen, Hsin Chu; Chen, Kuo Ju; Lai, Wei-Chi; Sheu, Jinn-Kong; Lai, Fang I.; Yu, Peichen; Kuo, Hao Chung.

In: Solar Energy Materials and Solar Cells, Vol. 117, 26.08.2013, p. 531-536.

Research output: Contribution to journalArticle

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AU - Chang, Chun Kai

AU - Chen, Hsin Chu

AU - Chen, Kuo Ju

AU - Lai, Wei-Chi

AU - Sheu, Jinn-Kong

AU - Lai, Fang I.

AU - Yu, Peichen

AU - Kuo, Hao Chung

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N2 - This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.

AB - This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.

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