Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Yu Lin Tsai; Chien Chung Lin; Hau Vei Han; Chun Kai Chang; Hsin Chu Chen; Kuo Ju Chen; Wei Chi Lai; Jin Kong Sheu; Fang I. Lai; Peichen Yu; Hao Chung Kuo

doi:10.1016/j.solmat.2013.07.004

Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Yu Lin Tsai, Chien Chung Lin, Hau Vei Han, Chun Kai Chang, Hsin Chu Chen, Kuo Ju Chen, Wei Chi Lai, Jin Kong Sheu, Fang I. Lai, Peichen Yu, Hao Chung Kuo

Department of Photonics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.

Original language	English
Pages (from-to)	531-536
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	117
DOIs	https://doi.org/10.1016/j.solmat.2013.07.004
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2013.07.004

Cite this

@article{f654c29cffd044da8e14c1fa919551c9,

title = "Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors",

abstract = "This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.",

author = "Tsai, {Yu Lin} and Lin, {Chien Chung} and Han, {Hau Vei} and Chang, {Chun Kai} and Chen, {Hsin Chu} and Chen, {Kuo Ju} and Lai, {Wei Chi} and Sheu, {Jin Kong} and Lai, {Fang I.} and Peichen Yu and Kuo, {Hao Chung}",

note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan under contract nos. NSC-100-3113-E-182-001-CC2 and NSC-100-2112-M-182-004 . C.C.L. is grateful for the financial support of National Science Council of Taiwan under contract no. NSC99-2221-E-009-052-MY3 . H.C.K and C.C.L. would also like to thank the Advanced Optoelectronic Technology Center, National Cheng Kung University for support. Ted Knoy is appreciated for his editorial assistance.",

year = "2013",

doi = "10.1016/j.solmat.2013.07.004",

language = "English",

volume = "117",

pages = "531--536",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

AU - Tsai, Yu Lin

AU - Lin, Chien Chung

AU - Han, Hau Vei

AU - Chang, Chun Kai

AU - Chen, Hsin Chu

AU - Chen, Kuo Ju

AU - Lai, Wei Chi

AU - Sheu, Jin Kong

AU - Lai, Fang I.

AU - Yu, Peichen

AU - Kuo, Hao Chung

N1 - Funding Information: This work was supported by the National Science Council (NSC) of Taiwan under contract nos. NSC-100-3113-E-182-001-CC2 and NSC-100-2112-M-182-004 . C.C.L. is grateful for the financial support of National Science Council of Taiwan under contract no. NSC99-2221-E-009-052-MY3 . H.C.K and C.C.L. would also like to thank the Advanced Optoelectronic Technology Center, National Cheng Kung University for support. Ted Knoy is appreciated for his editorial assistance.

PY - 2013

Y1 - 2013

N2 - This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.

AB - This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs.

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DO - 10.1016/j.solmat.2013.07.004

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SN - 0927-0248

VL - 117

SP - 531

EP - 536

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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