Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Zheng Dong Lin, Sheng Joue Young, Shoou-Jinn Chang

Research output: Contribution to journalArticlepeer-review

Abstract

A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.

Original languageEnglish
Article number7422774
Pages (from-to)1749-1753
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume63
Issue number4
DOIs
Publication statusPublished - 2016 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction'. Together they form a unique fingerprint.

Cite this