Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Zheng Dong Lin; Sheng Joue Young; Shoou Jinn Chang

doi:10.1109/TED.2016.2532349

Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Zheng Dong Lin, Sheng Joue Young, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

Abstract

A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( I_D-V_DS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 10⁷ and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.

Original language	English
Article number	7422774
Pages (from-to)	1749-1753
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	4
DOIs	https://doi.org/10.1109/TED.2016.2532349
Publication status	Published - 2016 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2016.2532349

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title = "Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction",

abstract = "A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.",

author = "Lin, {Zheng Dong} and Young, {Sheng Joue} and Chang, {Shoou Jinn}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = apr,

doi = "10.1109/TED.2016.2532349",

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AB - A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.

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Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Abstract

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