Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Zheng Dong Lin; Sheng Joue Young; Shoou-Jinn Chang

doi:10.1109/TED.2016.2532349

Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Zheng Dong Lin, Sheng Joue Young, Shoou-Jinn Chang

Research output: Contribution to journal › Article › peer-review

Abstract

A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( I_D-V_DS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 10⁷ and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.

Original language	English
Article number	7422774
Pages (from-to)	1749-1753
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	4
DOIs	https://doi.org/10.1109/TED.2016.2532349
Publication status	Published - 2016 Apr 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{82311468eb1e4c1b8b883d6833d23896,

title = "Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction",

abstract = "A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.",

author = "Lin, {Zheng Dong} and Young, {Sheng Joue} and Shoou-Jinn Chang",

year = "2016",

month = apr,

day = "1",

doi = "10.1109/TED.2016.2532349",

language = "English",

volume = "63",

pages = "1749--1753",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

AU - Lin, Zheng Dong

AU - Young, Sheng Joue

AU - Chang, Shoou-Jinn

PY - 2016/4/1

Y1 - 2016/4/1

N2 - A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.

AB - A semiconducting single-walled carbon nanotube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current-drain voltage ( ID-VDS) characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of 107 and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.

UR - http://www.scopus.com/inward/record.url?scp=84960158868&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84960158868&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2532349

DO - 10.1109/TED.2016.2532349

M3 - Article

AN - SCOPUS:84960158868

VL - 63

SP - 1749

EP - 1753

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

M1 - 7422774

ER -