The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry