Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

W. T. Hsieh, Y. K. Fang, S. F. Ting, Y. S. Tsair, W. J. Lee, Hong-Paul Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.

Original languageEnglish
Pages (from-to)1949-1952
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number11
DOIs
Publication statusPublished - 2002 Nov 1

Fingerprint

Propane
propane
Heterojunctions
heterojunctions
Diodes
Carbon
diodes
carbon
Electric breakdown
electrical faults
Thermal effects
temperature effects
Atoms
Temperature
atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Hsieh, W. T. ; Fang, Y. K. ; Ting, S. F. ; Tsair, Y. S. ; Lee, W. J. ; Wang, Hong-Paul. / Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source. In: Solid-State Electronics. 2002 ; Vol. 46, No. 11. pp. 1949-1952.
@article{15d3c6e0b7b0401c931d03d0cf39e978,
title = "Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source",
abstract = "The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.",
author = "Hsieh, {W. T.} and Fang, {Y. K.} and Ting, {S. F.} and Tsair, {Y. S.} and Lee, {W. J.} and Hong-Paul Wang",
year = "2002",
month = "11",
day = "1",
doi = "10.1016/S0038-1101(02)00125-9",
language = "English",
volume = "46",
pages = "1949--1952",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "11",

}

Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source. / Hsieh, W. T.; Fang, Y. K.; Ting, S. F.; Tsair, Y. S.; Lee, W. J.; Wang, Hong-Paul.

In: Solid-State Electronics, Vol. 46, No. 11, 01.11.2002, p. 1949-1952.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

AU - Hsieh, W. T.

AU - Fang, Y. K.

AU - Ting, S. F.

AU - Tsair, Y. S.

AU - Lee, W. J.

AU - Wang, Hong-Paul

PY - 2002/11/1

Y1 - 2002/11/1

N2 - The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.

AB - The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0036838327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036838327&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00125-9

DO - 10.1016/S0038-1101(02)00125-9

M3 - Article

VL - 46

SP - 1949

EP - 1952

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 11

ER -