Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

W. T. Hsieh, Y. K. Fang, S. F. Ting, Y. S. Tsair, W. J. Lee, H. P. Wang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The thermal effects on the I/V characteristics of p-SiGeC/n-Si heterojunction diode with C3H8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I/V characteristics.

Original languageEnglish
Pages (from-to)1949-1952
Number of pages4
JournalSolid-State Electronics
Volume46
Issue number11
DOIs
Publication statusPublished - 2002 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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