Improving light output power of AlInGaP-based LEDs using GaP nanorods prepared by SILAR method

X. F. Zeng, S. C. Shei, S. J. Chang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties.

Original languageEnglish
Pages (from-to)Q79-Q81
JournalECS Solid State Letters
Volume2
Issue number11
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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