Abstract
This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties.
Original language | English |
---|---|
Pages (from-to) | Q79-Q81 |
Journal | ECS Solid State Letters |
Volume | 2 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2013 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering