Improving light output power of AlInGaP-based LEDs using GaP nanorods prepared by SILAR method

X. F. Zeng; S. C. Shei; S. J. Chang

doi:10.1149/2.003311ssl

Improving light output power of AlInGaP-based LEDs using GaP nanorods prepared by SILAR method

X. F. Zeng, S. C. Shei, S. J. Chang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties.

Original language	English
Pages (from-to)	Q79-Q81
Journal	ECS Solid State Letters
Volume	2
Issue number	11
DOIs	https://doi.org/10.1149/2.003311ssl
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties.",

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AU - Zeng, X. F.

AU - Shei, S. C.

AU - Chang, S. J.

PY - 2013

Y1 - 2013

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AB - This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties.

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Improving light output power of AlInGaP-based LEDs using GaP nanorods prepared by SILAR method

Abstract

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