Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus

C. S. Lin, Y. K. Fang, S. F. Chen, Yu-Cheng Lin, M. C. Hsieh, C. C. Wang, H. K. Huang, C. L. Wu, C. S. Chang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A He plus reactive ion etching technology for selective etching GaAs/AlGaAs has been developed, for the first time. Etching selectivity was studied with SEM under different RF power, pressure, and reactant gases. Experimental results show the selectivity between GaAs and AlGaAs can be raised from 90 without He to 150 with He plus. Modeling has been proposed to interpret the improving mechanism.

Original languageEnglish
Pages (from-to)59-62
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume7
Issue number1-2
DOIs
Publication statusPublished - 2004 Feb 1
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus'. Together they form a unique fingerprint.

  • Cite this

    Lin, C. S., Fang, Y. K., Chen, S. F., Lin, Y-C., Hsieh, M. C., Wang, C. C., Huang, H. K., Wu, C. L., & Chang, C. S. (2004). Improving reactive ion etching selectivity of GaAs/AlGaAs with He plus. Materials Science in Semiconductor Processing, 7(1-2), 59-62. https://doi.org/10.1016/j.mssp.2004.01.001