A He plus reactive ion etching technology for selective etching GaAs/AlGaAs has been developed, for the first time. Etching selectivity was studied with SEM under different RF power, pressure, and reactant gases. Experimental results show the selectivity between GaAs and AlGaAs can be raised from 90 without He to 150 with He plus. Modeling has been proposed to interpret the improving mechanism.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering