Improving the conductance of ZnO thin films by doping with Ti

Yang Ming Lu; Chen Min Chang; Shu I. Tsai; Tzuu Shaang Wey

doi:10.1016/j.tsf.2003.09.022

Improving the conductance of ZnO thin films by doping with Ti

Yang Ming Lu, Chen Min Chang, Shu I. Tsai, Tzuu Shaang Wey

Hierarchical Green-Energy Materials Research Center

Research output: Contribution to journal › Conference article › peer-review

61 Citations (Scopus)

Abstract

The Ti-doped ZnO films were deposited onto Corning 7059 glass substrates using a magnetron co-sputtering process in a mixture of oxygen and argon gases. The experimental results show that the deposition rate increases approximately linearly with Ti target powers (DC) when lower than 300 W powers of them were applied. Only the (002) X-ray diffraction 2θ peak appears in the range of study. The incorporation of titanium atoms into zinc oxide films is obvious effectively, when Ti target power is above 250 W. The atomic percentage of titanium in ZnO films were measured to be 1.33 and 2.51% corresponding to 250 and 300 W of Ti target power, respectively. The resistivity of undoped ZnO films is high and reduces to a value of 3.78×10^-2 Ω cm when 2.5 at.% of Ti is incorporated. All of the zinc oxide films have 70-80% transmittance in the range of 400-700 nm. The optical energy gap increases with the amount of Ti in the ZnO films.

Original language	English
Pages (from-to)	56-60
Number of pages	5
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.09.022
Publication status	Published - 2004 Jan 30
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.09.022

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title = "Improving the conductance of ZnO thin films by doping with Ti",

abstract = "The Ti-doped ZnO films were deposited onto Corning 7059 glass substrates using a magnetron co-sputtering process in a mixture of oxygen and argon gases. The experimental results show that the deposition rate increases approximately linearly with Ti target powers (DC) when lower than 300 W powers of them were applied. Only the (002) X-ray diffraction 2θ peak appears in the range of study. The incorporation of titanium atoms into zinc oxide films is obvious effectively, when Ti target power is above 250 W. The atomic percentage of titanium in ZnO films were measured to be 1.33 and 2.51% corresponding to 250 and 300 W of Ti target power, respectively. The resistivity of undoped ZnO films is high and reduces to a value of 3.78×10-2 Ω cm when 2.5 at.% of Ti is incorporated. All of the zinc oxide films have 70-80% transmittance in the range of 400-700 nm. The optical energy gap increases with the amount of Ti in the ZnO films.",

author = "Lu, {Yang Ming} and Chang, {Chen Min} and Tsai, {Shu I.} and Wey, {Tzuu Shaang}",

note = "Funding Information: The authors are grateful to the National Science Council in Taiwan for financially supporting this research under the NSC91-2216-E-168-005 grants.; Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2004",

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doi = "10.1016/j.tsf.2003.09.022",

language = "English",

volume = "447-448",

pages = "56--60",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Improving the conductance of ZnO thin films by doping with Ti

AU - Lu, Yang Ming

AU - Chang, Chen Min

AU - Tsai, Shu I.

AU - Wey, Tzuu Shaang

N1 - Funding Information: The authors are grateful to the National Science Council in Taiwan for financially supporting this research under the NSC91-2216-E-168-005 grants.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - The Ti-doped ZnO films were deposited onto Corning 7059 glass substrates using a magnetron co-sputtering process in a mixture of oxygen and argon gases. The experimental results show that the deposition rate increases approximately linearly with Ti target powers (DC) when lower than 300 W powers of them were applied. Only the (002) X-ray diffraction 2θ peak appears in the range of study. The incorporation of titanium atoms into zinc oxide films is obvious effectively, when Ti target power is above 250 W. The atomic percentage of titanium in ZnO films were measured to be 1.33 and 2.51% corresponding to 250 and 300 W of Ti target power, respectively. The resistivity of undoped ZnO films is high and reduces to a value of 3.78×10-2 Ω cm when 2.5 at.% of Ti is incorporated. All of the zinc oxide films have 70-80% transmittance in the range of 400-700 nm. The optical energy gap increases with the amount of Ti in the ZnO films.

AB - The Ti-doped ZnO films were deposited onto Corning 7059 glass substrates using a magnetron co-sputtering process in a mixture of oxygen and argon gases. The experimental results show that the deposition rate increases approximately linearly with Ti target powers (DC) when lower than 300 W powers of them were applied. Only the (002) X-ray diffraction 2θ peak appears in the range of study. The incorporation of titanium atoms into zinc oxide films is obvious effectively, when Ti target power is above 250 W. The atomic percentage of titanium in ZnO films were measured to be 1.33 and 2.51% corresponding to 250 and 300 W of Ti target power, respectively. The resistivity of undoped ZnO films is high and reduces to a value of 3.78×10-2 Ω cm when 2.5 at.% of Ti is incorporated. All of the zinc oxide films have 70-80% transmittance in the range of 400-700 nm. The optical energy gap increases with the amount of Ti in the ZnO films.

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U2 - 10.1016/j.tsf.2003.09.022

DO - 10.1016/j.tsf.2003.09.022

M3 - Conference article

AN - SCOPUS:1342281341

SN - 0040-6090

VL - 447-448

SP - 56

EP - 60

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 30th International Conference on Metallurgie

Y2 - 28 April 2002 through 2 May 2002

ER -

Improving the conductance of ZnO thin films by doping with Ti

Abstract

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