Improving the conductance of ZnO thin films by doping with Ti

Yang Ming Lu, Chen Min Chang, Shu I. Tsai, Tzuu Shaang Wey

Research output: Contribution to journalConference articlepeer-review

52 Citations (Scopus)

Abstract

The Ti-doped ZnO films were deposited onto Corning 7059 glass substrates using a magnetron co-sputtering process in a mixture of oxygen and argon gases. The experimental results show that the deposition rate increases approximately linearly with Ti target powers (DC) when lower than 300 W powers of them were applied. Only the (002) X-ray diffraction 2θ peak appears in the range of study. The incorporation of titanium atoms into zinc oxide films is obvious effectively, when Ti target power is above 250 W. The atomic percentage of titanium in ZnO films were measured to be 1.33 and 2.51% corresponding to 250 and 300 W of Ti target power, respectively. The resistivity of undoped ZnO films is high and reduces to a value of 3.78×10-2 Ω cm when 2.5 at.% of Ti is incorporated. All of the zinc oxide films have 70-80% transmittance in the range of 400-700 nm. The optical energy gap increases with the amount of Ti in the ZnO films.

Original languageEnglish
Pages (from-to)56-60
Number of pages5
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Improving the conductance of ZnO thin films by doping with Ti'. Together they form a unique fingerprint.

Cite this