In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers

Po Cheng Tsai, Chun Wei Huang, Shoou Jinn Chang, Shu Wei Chang, Shih Yen Lin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We demonstrate in-plane gate transistors based on the molybdenum disulfide (MoS2)/graphene hetero-structure. The graphene works as channels while MoS2 functions as passivation layers. The weak hysteresis of the device suggests that the MoS2 layer can effectively passivate the graphene channel. The characteristics of devices with and without removal of MoS2 between electrodes and graphene are also compared. The device with direct electrode/graphene contact shows a reduced contact resistance, increased drain current, and enhanced field-effect mobility. The higher field-effect mobility than that obtained through Hall measurement indicates that more carriers are present in the channel, rendering it more conductive.

Original languageEnglish
Article number9197
JournalScientific reports
Volume13
Issue number1
DOIs
Publication statusPublished - 2023 Dec

All Science Journal Classification (ASJC) codes

  • General

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