In-plane thermal and electronic transport in quantum dot superlattice

A. Khitun, J. L. Liu, K. L. Wang, G. Chen

Research output: Contribution to journalConference articlepeer-review


We present a theoretical model in order to describe both thermal and electronic in-plane transports in quantum dot superlattice. The model takes into account the modifications of electron and phonon transport due to the space confinement caused by the mismatch in electronic and thermal properties between dot and host materials. The developed model provides the analysis of the in-plane superlattice electronic and thermal properties versus quantum dot size and their arrangement. Numerical calculations were carried out for a structure that consists of multiple layers of Si with regimented germanium quantum dots. The simulation results of the lattice thermal conductivity are in good agreement with experimental data.

Original languageEnglish
Pages (from-to)AA4.9.1-AA4.9.6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2001
EventAdvances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales - San Francisco, CA, United States
Duration: 2001 Apr 162001 Apr 20

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'In-plane thermal and electronic transport in quantum dot superlattice'. Together they form a unique fingerprint.

Cite this