In-plane thermal and electronic transport in quantum dot superlattice

We present a theoretical model in order to describe both thermal and electronic in-plane transports in quantum dot superlattice. The model takes into account the modifications of electron and phonon transport due to the space confinement caused by the mismatch in electronic and thermal properties between dot and host materials. The developed model provides the analysis of the in-plane superlattice electronic and thermal properties versus quantum dot size and their arrangement. Numerical calculations were carried out for a structure that consists of multiple layers of Si with regimented germanium quantum dots. The simulation results of the lattice thermal conductivity are in good agreement with experimental data.