In-plane thermoelectric properties of Si/Ge superlattice

W. L. Liu; T. Borca-Tasciuc; J. L. Liu; K. Taka; K. L. Wang; M. S. Dresselhaus; G. Chen

In-plane thermoelectric properties of Si/Ge superlattice

W. L. Liu, T. Borca-Tasciuc, J. L. Liu, K. Taka, K. L. Wang, M. S. Dresselhaus, G. Chen

College of Electrical Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

11 Citations (Scopus)

Abstract

In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3ω method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering.

Original language	English
Pages	340-343
Number of pages	4
Publication status	Published - 2001
Event	20th International Conference on Thermoelectrics ICT'01 - Beijing, China Duration: 2001 Jun 8 → 2001 Jun 11

Conference

Conference	20th International Conference on Thermoelectrics ICT'01
Country	China
City	Beijing
Period	01-06-08 → 01-06-11

All Science Journal Classification (ASJC) codes

Engineering(all)

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Cite this

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title = "In-plane thermoelectric properties of Si/Ge superlattice",

abstract = "In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3ω method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering.",

author = "Liu, {W. L.} and T. Borca-Tasciuc and Liu, {J. L.} and K. Taka and Wang, {K. L.} and Dresselhaus, {M. S.} and G. Chen",

year = "2001",

language = "English",

pages = "340--343",

}

TY - CONF

T1 - In-plane thermoelectric properties of Si/Ge superlattice

AU - Liu, W. L.

AU - Borca-Tasciuc, T.

AU - Liu, J. L.

AU - Taka, K.

AU - Wang, K. L.

AU - Dresselhaus, M. S.

AU - Chen, G.

PY - 2001

Y1 - 2001

N2 - In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3ω method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering.

AB - In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3ω method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering.

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UR - http://www.scopus.com/inward/citedby.url?scp=0035708739&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035708739

SP - 340

EP - 343

T2 - 20th International Conference on Thermoelectrics ICT'01

Y2 - 8 June 2001 through 11 June 2001

ER -