Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry