In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

H. Asaoka; T. Yamazaki; H. Yamamoto; S. Shamoto

doi:10.1016/j.tsf.2005.08.413

In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

H. Asaoka, T. Yamazaki, H. Yamamoto, S. Shamoto

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O₂ gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.

Original language	English
Pages (from-to)	175-177
Number of pages	3
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.08.413
Publication status	Published - 2006 Jun 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.08.413

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@article{b73cb0fbf2a44a5e871144bb2a7dd6b1,

title = "In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces",

abstract = "Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.",

author = "H. Asaoka and T. Yamazaki and H. Yamamoto and S. Shamoto",

year = "2006",

month = jun,

day = "5",

doi = "10.1016/j.tsf.2005.08.413",

language = "English",

volume = "508",

pages = "175--177",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

AU - Asaoka, H.

AU - Yamazaki, T.

AU - Yamamoto, H.

AU - Shamoto, S.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.

AB - Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=33646115676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646115676&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.08.413

DO - 10.1016/j.tsf.2005.08.413

M3 - Article

AN - SCOPUS:33646115676

VL - 508

SP - 175

EP - 177

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

Abstract

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