In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

H. Asaoka, T. Yamazaki, H. Yamamoto, S. Shamoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.

Original languageEnglish
Pages (from-to)175-177
Number of pages3
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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