In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

H. Asaoka; T. Yamazaki; H. Yamamoto; S. Shamoto

doi:10.1016/j.tsf.2005.08.413

In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

H. Asaoka
, T. Yamazaki
, H. Yamamoto
, S. Shamoto

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O₂ gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.

Original language	English
Pages (from-to)	175-177
Number of pages	3
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.08.413
Publication status	Published - 2006 Jun 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.08.413

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title = "In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces",

abstract = "Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12\%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.",

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AU - Asaoka, H.

AU - Yamazaki, T.

AU - Yamamoto, H.

AU - Shamoto, S.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.

AB - Heterointerfacial structures between Sr or SrO films and Si surfaces are characterized by using reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) methods during epitaxial growth process. Using a modified Si surface by hydrogen atoms, a sharp interface of SrO film on Si is obtained through an alternate supply of Sr and O2 gas. In spite of the lattice mismatch as large as 12%, a heteroepitaxial Sr film grows with an abrupt interface of one-atomic-layer thickness.

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UR - https://www.scopus.com/pages/publications/33646115676#tab=citedBy

U2 - 10.1016/j.tsf.2005.08.413

DO - 10.1016/j.tsf.2005.08.413

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AN - SCOPUS:33646115676

SN - 0040-6090

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SP - 175

EP - 177

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces

Abstract

All Science Journal Classification (ASJC) codes

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