In situ grown AlN/AlGaN/GaN heterostructure field-effect transistor

Zi Hao Wang, Ping Chuan Chang, Kai Hsuan Lee, Shoou Jinn Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In situ grown AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) heterostructure field-effect transistor (HFET) is promising for high power applications due to the reduced gate leakage current together with the successful surface passivation. In this study, we present a novel AlGaN/GaN MIS-HFET using in situ AlN as a gate insulator. The AlN is formed subsequently after the epitaxial growth in the same reactor without any exposure in the air. This "earlier" passivation by in situ AlN protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics. The unity gain cutoff frequency (f T) and maximum frequency of oscillation (f max) are 14.5 and 24.9 GHz, respectively. The fabricated AlN/AlGaN/GaN MIS-HFET at 2.4 GHz delivers 2.3 W/mm output power density and 21.3% peak power added efficiency. It demonstrates a great potential to the next-generation power transistor.

Original languageEnglish
Title of host publicationIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
Pages106-107
Number of pages2
DOIs
Publication statusPublished - 2012
Event10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan
Duration: 2012 May 92012 May 11

Publication series

NameIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Other

Other10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
Country/TerritoryJapan
CityOsaka
Period12-05-0912-05-11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'In situ grown AlN/AlGaN/GaN heterostructure field-effect transistor'. Together they form a unique fingerprint.

Cite this