In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors

Wei Yang Chou; Sheng Kuang Peng; Hsin Hsiu Lin; Horng Long Cheng

doi:10.1016/j.jpcs.2022.110628

In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors

Wei Yang Chou, Sheng Kuang Peng, Hsin Hsiu Lin, Horng Long Cheng

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Low-voltage organic memory transistors (LOMTs) in situ operation from 25 °C to 100 °C were studied. The interface between charge trapping and active layers exhibited a correlation between the performances of LOMTs and the temperature of environment. Effective microstructures and interface properties need to be investigated to understand the physical mechanisms of the LOMTs in situ operation at various temperatures. When the temperature increased, the thermal disturbance fluctuated the channel, leading to the variety of memory characteristics for the LOMTs. The memory window of LOMTs can reach 1.87 V at 25 °C and maintain most memory stability below 40 °C.

Original language	English
Article number	110628
Journal	Journal of Physics and Chemistry of Solids
Volume	164
DOIs	https://doi.org/10.1016/j.jpcs.2022.110628
Publication status	Published - 2022 May

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.jpcs.2022.110628

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@article{251e3f88efbd45dbb65bd8c4f988d443,

title = "In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors",

abstract = "Low-voltage organic memory transistors (LOMTs) in situ operation from 25 °C to 100 °C were studied. The interface between charge trapping and active layers exhibited a correlation between the performances of LOMTs and the temperature of environment. Effective microstructures and interface properties need to be investigated to understand the physical mechanisms of the LOMTs in situ operation at various temperatures. When the temperature increased, the thermal disturbance fluctuated the channel, leading to the variety of memory characteristics for the LOMTs. The memory window of LOMTs can reach 1.87 V at 25 °C and maintain most memory stability below 40 °C.",

author = "Chou, {Wei Yang} and Peng, {Sheng Kuang} and Lin, {Hsin Hsiu} and Cheng, {Horng Long}",

note = "Funding Information: The authors acknowledge the financial support from the Ministry of Science and Technology of Taiwan (MOST 110-2112-M-006-015). Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2022",

month = may,

doi = "10.1016/j.jpcs.2022.110628",

language = "English",

volume = "164",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

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T1 - In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors

AU - Chou, Wei Yang

AU - Peng, Sheng Kuang

AU - Lin, Hsin Hsiu

AU - Cheng, Horng Long

PY - 2022/5

Y1 - 2022/5

N2 - Low-voltage organic memory transistors (LOMTs) in situ operation from 25 °C to 100 °C were studied. The interface between charge trapping and active layers exhibited a correlation between the performances of LOMTs and the temperature of environment. Effective microstructures and interface properties need to be investigated to understand the physical mechanisms of the LOMTs in situ operation at various temperatures. When the temperature increased, the thermal disturbance fluctuated the channel, leading to the variety of memory characteristics for the LOMTs. The memory window of LOMTs can reach 1.87 V at 25 °C and maintain most memory stability below 40 °C.

AB - Low-voltage organic memory transistors (LOMTs) in situ operation from 25 °C to 100 °C were studied. The interface between charge trapping and active layers exhibited a correlation between the performances of LOMTs and the temperature of environment. Effective microstructures and interface properties need to be investigated to understand the physical mechanisms of the LOMTs in situ operation at various temperatures. When the temperature increased, the thermal disturbance fluctuated the channel, leading to the variety of memory characteristics for the LOMTs. The memory window of LOMTs can reach 1.87 V at 25 °C and maintain most memory stability below 40 °C.

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DO - 10.1016/j.jpcs.2022.110628

M3 - Article

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SN - 0022-3697

VL - 164

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

M1 - 110628

ER -

In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors

Abstract

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