In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

Chun Cheng Lin; Chia Chiang Chang; Chin Jyi Wu; Zong Liang Tseng; Jian Fu Tang; Sheng Yuan Chu; Yi Chun Chen; Xiaoding Qi

doi:10.1063/1.4795525

In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

Chun Cheng Lin, Chia Chiang Chang, Chin Jyi Wu, Zong Liang Tseng, Jian Fu Tang, Sheng Yuan Chu, Yi Chun Chen, Xiaoding Qi

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Li-doped zinc oxide (L_0.03Z_0.97O) thin films are deposited onto Pt/Ti/SiO₂/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d₃₃) and the remnant polarization (P_r) (22.85 pm/V and 0.655 μC/cm², respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

Original language	English
Article number	102107
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795525
Publication status	Published - 2013 Mar 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4795525

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title = "In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system",

abstract = "Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.",

author = "Lin, {Chun Cheng} and Chang, {Chia Chiang} and Wu, {Chin Jyi} and Tseng, {Zong Liang} and Tang, {Jian Fu} and Chu, {Sheng Yuan} and Chen, {Yi Chun} and Xiaoding Qi",

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doi = "10.1063/1.4795525",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

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T1 - In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

AU - Lin, Chun Cheng

AU - Chang, Chia Chiang

AU - Wu, Chin Jyi

AU - Tseng, Zong Liang

AU - Tang, Jian Fu

AU - Chu, Sheng Yuan

AU - Chen, Yi Chun

AU - Qi, Xiaoding

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

AB - Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

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In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

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