In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

Chun Cheng Lin, Chia Chiang Chang, Chin Jyi Wu, Zong Liang Tseng, Jian Fu Tang, Sheng Yuan Chu, Yi Chun Chen, Xiaoding Qi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

Original languageEnglish
Article number102107
JournalApplied Physics Letters
Volume102
Issue number10
DOIs
Publication statusPublished - 2013 Mar 11

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piezoelectricity
ferroelectricity
radio frequencies
magnetron sputtering
annealing
thin films
zinc oxides
oxygen
polarization
coefficients
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system",
abstract = "Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.",
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In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system. / Lin, Chun Cheng; Chang, Chia Chiang; Wu, Chin Jyi; Tseng, Zong Liang; Tang, Jian Fu; Chu, Sheng Yuan; Chen, Yi Chun; Qi, Xiaoding.

In: Applied Physics Letters, Vol. 102, No. 10, 102107, 11.03.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

AU - Lin, Chun Cheng

AU - Chang, Chia Chiang

AU - Wu, Chin Jyi

AU - Tseng, Zong Liang

AU - Tang, Jian Fu

AU - Chu, Sheng Yuan

AU - Chen, Yi Chun

AU - Qi, Xiaoding

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AB - Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

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