In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice

Hsin Mei Lu; Chih Yang Huang; Guan Ming Huang; Kuo Chang Lu; Wen Wei Wu

doi:10.1016/j.scriptamat.2020.10.029

In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice

Hsin Mei Lu, Chih Yang Huang, Guan Ming Huang, Kuo Chang Lu, Wen Wei Wu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this work, the titanium germanosilicide (TiSiGe_x) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGe_x-SL, contributing to a discontinuous thin film layer.

Original language	English
Pages (from-to)	6-11
Number of pages	6
Journal	Scripta Materialia
Volume	193
DOIs	https://doi.org/10.1016/j.scriptamat.2020.10.029
Publication status	Published - 2021 Mar 1

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2020.10.029

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title = "In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice",

abstract = "In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.",

author = "Lu, {Hsin Mei} and Huang, {Chih Yang} and Huang, {Guan Ming} and Lu, {Kuo Chang} and Wu, {Wen Wei}",

note = "Funding Information: The authors acknowledge the support from the Ministry of Science and Technology (MOST) in Taiwan (MOST 108-2221-E-009-036-MY3, MOST 108-2221-E-006-139 -MY3, MOST 106-2628-E-009-002-MY3 and MOST 106-2119-M-009-008). This work was financially supported by the “Center for Semiconductor Technology Research at National Chiao Tung University” and the “Frontier Research Center on Fundamental and Applied Sciences of Matters at National Tsing Hua University” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. It was also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-109-2634-F-009-029. Publisher Copyright: {\textcopyright} 2020",

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doi = "10.1016/j.scriptamat.2020.10.029",

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AU - Lu, Hsin Mei

AU - Huang, Chih Yang

AU - Huang, Guan Ming

AU - Lu, Kuo Chang

AU - Wu, Wen Wei

N1 - Funding Information: The authors acknowledge the support from the Ministry of Science and Technology (MOST) in Taiwan (MOST 108-2221-E-009-036-MY3, MOST 108-2221-E-006-139 -MY3, MOST 106-2628-E-009-002-MY3 and MOST 106-2119-M-009-008). This work was financially supported by the “Center for Semiconductor Technology Research at National Chiao Tung University” and the “Frontier Research Center on Fundamental and Applied Sciences of Matters at National Tsing Hua University” from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. It was also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-109-2634-F-009-029. Publisher Copyright: © 2020

PY - 2021/3/1

Y1 - 2021/3/1

N2 - In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.

AB - In this work, the titanium germanosilicide (TiSiGex) superlattice (SL) has been successfully fabricated. A monolayer of silicon atoms and bilayer of inversed titanium silicide constructed this novel superlattice periodically. A localized strain field has been found as a crucial factor via high resolution Annular Dark Field Scanning Transmission Electron Microscope (ADF-STEM) images, being generated by gradual segregation of germanium atoms. Germanium atoms would be excluded during the formation of the transition silicide. This phenomenon could be interpreted by thermodynamic preference. There was a substitution reaction between silicon and germanium, resulting from similar atomic volumes of both. In other words, germanium segregation pathway was based on where substitution occurred. Eventually, the excluded germanium atoms tended to accumulate at the boundary of TiSiGex-SL, contributing to a discontinuous thin film layer.

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In-situ Transmission Electron Microscope Investigation of Atomic-scale Titanium Silicide Monolayer Superlattice

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