InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Yeong Jia Chen, Wei-Chou Hsu, Yen Wei Chen, Yu Shyan Lin, Rong Tay Hsu, Yue Huei Wu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalSolid-State Electronics
Volume49
Issue number2
DOIs
Publication statusPublished - 2005 Feb 1

Fingerprint

Transconductance
transconductance
linearity
Heterojunctions
breakdown
Organic Chemicals
High temperature applications
Organic chemicals
Electric potential
Growth temperature
electric potential
Buffer layers
barrier layers
Electric breakdown
electrical faults
metalorganic chemical vapor deposition
Chemical vapor deposition
Transistors
transistors
low pressure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chen, Yeong Jia ; Hsu, Wei-Chou ; Chen, Yen Wei ; Lin, Yu Shyan ; Hsu, Rong Tay ; Wu, Yue Huei. / InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations. In: Solid-State Electronics. 2005 ; Vol. 49, No. 2. pp. 163-166.
@article{6aeaa82c068e4bcca86d90a0ad069a49,
title = "InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations",
abstract = "High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.",
author = "Chen, {Yeong Jia} and Wei-Chou Hsu and Chen, {Yen Wei} and Lin, {Yu Shyan} and Hsu, {Rong Tay} and Wu, {Yue Huei}",
year = "2005",
month = "2",
day = "1",
doi = "10.1016/j.sse.2004.08.003",
language = "English",
volume = "49",
pages = "163--166",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "2",

}

InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations. / Chen, Yeong Jia; Hsu, Wei-Chou; Chen, Yen Wei; Lin, Yu Shyan; Hsu, Rong Tay; Wu, Yue Huei.

In: Solid-State Electronics, Vol. 49, No. 2, 01.02.2005, p. 163-166.

Research output: Contribution to journalArticle

TY - JOUR

T1 - InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

AU - Chen, Yeong Jia

AU - Hsu, Wei-Chou

AU - Chen, Yen Wei

AU - Lin, Yu Shyan

AU - Hsu, Rong Tay

AU - Wu, Yue Huei

PY - 2005/2/1

Y1 - 2005/2/1

N2 - High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.

AB - High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.

UR - http://www.scopus.com/inward/record.url?scp=9544243710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9544243710&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2004.08.003

DO - 10.1016/j.sse.2004.08.003

M3 - Article

VL - 49

SP - 163

EP - 166

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2

ER -