InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Yeong Jia Chen, Wei Chou Hsu, Yen Wei Chen, Yu Shyan Lin, Rong Tay Hsu, Yue Huei Wu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 2005 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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