TY - JOUR
T1 - InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
AU - Chen, Yeong Jia
AU - Hsu, Wei Chou
AU - Chen, Yen Wei
AU - Lin, Yu Shyan
AU - Hsu, Rong Tay
AU - Wu, Yue Huei
N1 - Funding Information:
The authors would like to thank the National Science Council of the Republic of China, Taiwan for financially supporting this research under contract no. NSC91-2215-E-006-022. Authors also acknowledge the support of all members of the South Epitaxy Corporation involved in this project.
PY - 2005/2
Y1 - 2005/2
N2 - High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.
AB - High-linearity In0.52Al0.48As/In 0.53Ga0.47As doped channel transistor (DCFET) was successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Due to the presence of doped InGaAs channel, undoped InAlAs barrier layer and low-temperature growth InAlAs buffer layer, good carrier confinement, improved breakdown and a wide transconductance operation regime are expected. Experimentally, for a 1.5 × 100 μm2 device, high-transconductance of 291mS/mm, high-gate-drain breakdown voltage of 20.2V, high-turn-on voltage of 0.78V, wide operation regime of 288mA/mm as well as significantly improved gate voltage swing of 1.05 V are achieved. Additionally, the studied device shows good temperature characteristics. The performance indicates the promise for high-power and high-temperature applications.
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U2 - 10.1016/j.sse.2004.08.003
DO - 10.1016/j.sse.2004.08.003
M3 - Article
AN - SCOPUS:9544243710
SN - 0038-1101
VL - 49
SP - 163
EP - 166
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 2
ER -